Cascode GaN高电子迁移率晶体管高频驱动电路及损耗分析

doi:10.19595/j.cnki.1000-6753.tces.210243

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Abstract In order to reduce the loss of the GaN driving circuit during high-frequency operation, high-frequency resonant drive circuit for the Cascode GaN high electron mobility transistor is proposed in this paper. In the circuit, the traditional power-dissipation device is replaced by the power-storage device, and the GaN device gate capacitor is charged or discharged through the inductance current. At the same time, the crosstalk of bridge arm is suppressed by the active Mueller clamp circuit. In this paper, the working mode of the high-frequency resonant driving circuit was studied, the circuit loss was analyzed in detail, the selection principle of the inductance value was given, and the simulation of the circuit was verified by PSIM software. Finally, an experimental platform was built to test the performance of the circuit. The results show that the inductor provides a low impedance path for capacitor charging or discharging, the voltage oscillation of GaN device drive circuit is effectively reduced, and the loss is obviously reduced. The simulation and experiment show that the proposed circuit has better performance.

Key words： Cascode GaN high electron mobility transistor high-frequency resonance drive circuit crosstalk suppression low loss

Received: 01 March 2021

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TM46

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	Yue Gaili
	Xiang Fuwei
	Li Zhong

Cite this article:

Yue Gaili,Xiang Fuwei,Li Zhong. High-Frequency Drive Circuit and Its Loss Analysis of Cascode GaN High Electron Mobility Transistor[J]. Transactions of China Electrotechnical Society, 2021, 36(20): 4194-4203.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.210243 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I20/4194

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