针对GaN器件的非对称双路同步谐振栅极驱动电路

doi:10.19595/j.cnki.1000-6753.tces.L90138

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Abstract Commercial gallium nitride (GaN) switches are widely used in power electronic converters recently years due to their advantages such as fast switching speed and low turn-on resistance. Accordingly, resonant gate drivers are adopted to reduce drive loss in high frequency and low power applications. However, different from Si switches, the turn-on threshold voltage of GaN switches is quite low and GaN switches have no body diode, which causes large reverse voltage drop. Therefore, traditional resonant gate drivers are not suitable for GaN switches. In order to solve the drive signal oscillation caused by parasitic parameters in high frequency applications, a resonant gate driver with asymmetrical voltage is proposed in this paper. Besides, for applications that require two synchronous switches, such as switch inductor converters, a transformer with two groups of secondary sides is added. The working principles are presented and parameters are optimized for lower loss. A 1MHz prototype is designed for experimental verification. The experimental results are in good agreement with the theoretical analysis.

Key words： GaN GaN resonant gate driver resonant gate driver resonant inductor resonant inductor loss analysis loss analysis

Received: 30 June 2020

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TM46

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	Gao Shanshan
	Gao Shanshan
	Wang Yijie
	Wang Yijie
	Liu Yining
	Liu Yining
	Xu Dianguo
	Xu Dianguo

Cite this article:

Gao Shanshan,Gao Shanshan,Wang Yijie等. Resonant Gate Driver with Asymmetrical Voltage and Two Synchronous Drive Signals for GaN Switches[J]. Transactions of China Electrotechnical Society, 2021, 36(20): 4185-4193.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90138 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I20/4185

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