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| Temperature Prediction Model of IGBT Modules Based on Lumped Parameters Method |
| Wei Kexin1, 2, Du Mingxing1, 2 |
| 1. Tianjin University Tianjin 300072 China 2. Tianjin Key Lab of Control Theory and Applications in Complicated System Tianjin 300384 China |
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Abstract Temperature of insulated gate bipolar transistor (IGBT) modules is a main influence factor of reliability, which is very difficult to measure. In order to solve this problem, interior heat conduction mechanism is analyzed. Then thermal network model of IGBT modules is constructed by employing lumped parameters method of instantaneous unsteady heat conduction. Parameters extraction methods of equivalent thermal resistance, equivalent thermal capacitance and heat losses are preferred. The paper gives experimental and simulated temperature curves, which datum from thermal network model, technical documents, base-plate measurement and finite element model. Result show that thermal network model is validated.
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Received: 11 October 2010
Published: 10 March 2014
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2011, Vol. 26 
