Abstract:In order to investigate the electromagnetic interference (EMI) behavior of the drive circuit of MOSFET in Boost converter, this paper firstly separates the EMI emission of gate drive circuit from the EMI emission of the whole circuit of a prototype of Boost converter. The measured EMI demonstrates the gate drive circuit is a serious EMI source. The paper then analyzes the principle of the overshoot of drive voltage, and proposes a method to suppress excess EMI emission by eliminating the drive overshoot for Boost converter. The effectiveness of the EMI suppression method is testified by simulation and experiments.
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