Review of the Difference between the Press Pack IGBT Using for Converter Valve and for DC Breaker
Zhao Zhibin1, Deng Erping1, Zhang Peng2, Zhang Jun1, Huang Yongzhang1
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China; 2.State Grid Global Energy Interconnection Research Institute Beijing 102209 China
Abstract：Press pack IGBT (PPI) are becoming ideal switch devices of the flexible HVDC (High Voltage Direct Current) converter valve and the DC (Direct Current) breaker for its high withstand voltage, high current density, low control power, fast switching speed and double side cooling etc. We should develop low on-state voltage drop PPI for converter valve and high short-circuit breaking capacity PPI for DC breaker, according to the particular application in flexible HVDC. This paper has analyzed the differences of current, voltage, temperature and pressure internal and external PPI, respectively for converter valve and DC breaker, summarized probable failure reasons in application of two types of PPI, and put forward some technical issues which should be considered in the packaging design.
赵志斌,邓二平,张朋,张骏,黄永章. 换流阀用与直流断路器用压接型IGBT器件差异分析[J]. 电工技术学报, 2017, 32(19): 125-133.
Zhao Zhibin, Deng Erping, Zhang Peng, Zhang Jun, Huang Yongzhang. Review of the Difference between the Press Pack IGBT Using for Converter Valve and for DC Breaker. Transactions of China Electrotechnical Society, 2017, 32(19): 125-133.
[1] Shigekane H, Kirihata H, Uchida Y. Developments in modern high power semiconductor devices[C] // Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, Monterey, California, USA, 1993: 16-21. [2] Takahashi Y, Yoshikawa K, Soutome M, et al. 2.5 kV- 1 000 A power pack IGBT (high power flat-packaged NPT type RC-IGBT)[J] . IEEE Transactions on Electron Devices, 1999, 46(1): 245-250. [3] Gunturi S, Schneider D. On the operation of a press pack IGBT module under short circuit conditions[J] . IEEE Transactions on Advanced Packaging, 2006, 29(3): 433-440. [4] 王春雷, 郑利兵, 方化潮, 等. 键合线失效对于IGBT模块性能的影响分析[J] . 电工技术学报, 2014, 29(增刊1): 184-191. Wang Chunlei, Zheng Libing, Fang Huachao, et al. Analysis of the performance effect with bonding wire lift-off in IGBT modules[J] . Transactions of China Electrotechnical Society, 2014, 29(S1): 184-191. [5] 唐勇, 汪波, 陈明, 等. 高温下的IGBT可靠性与在线评估[J] . 电工技术学报, 2014, 29(6): 17-23. Tang Yong, Wang Bo, Chen Ming, et al. Reliability and on-line evaluation of IGBT modules under high temperature[J] . Transactions of China Electrotechnical Society, 2014, 29(6): 17-23. [6] 荣命哲, 杨飞, 吴翊, 等. 直流断路器电弧研究的新进展[J] . 电工技术学报, 2014, 29(1): 1-9. Rong Mingzhe, Yang Fei, Wu Yi, et al. New developments in switching arc research in DC circuit breaker[J] . Transactions of China Electrotechnical Society, 2014, 29(1): 1-9. [7] 张俊, 李跃婷. 直流输电工程换流阀控制系统对比分析[J] . 电力系统保护与控制, 2014, 42(20): 146-149. Zhang Jun, Li Yueting. Relative analysis for valve control system in HVDC[J] . Transactions of China Electrotechnical Society, 2014, 42(20): 146-149. [8] 徐政. 柔性直流输电系统[M] . 北京: 机械工业出版社, 2013. [9] 汤广福. 基于电压源换流器的高压直流输电技术[M] . 北京: 中国电力出版社, 2010. [10] Callavik M, Blomberg A, Häfner J. The hybrid HVDC breaker: an innovation break through enabling reliable HVDC grid[J] . ABB Grid System, Technical paper, 2012: 1-10. [11] Wakeman F, Lockwood G, Davies M, et al. Press contact IGBT, the ideal switch for high power application[C] //Conference Record of the 1999 Industry Applications Conference, Thirty-Fourth IAS Annual Meeting, Seattle, USA, 1999, 1: 700-707. [12] Kon H, Kitagawa M. The 4 500 V trench gate IEGT with current sense function[C] //Fourteenth Annual Applied Power Electronics Conference and Exposition, Dallas, USA, 1999, 2: 676-681. [13] Bock B, Krafft E U, Steimel A. Measurement of multiple chip current in a press-pack IGBT using Rogowski coils[C] //10th European Conference on Power Electronics and Applications (EPE), Toulouse, France, 2003: 1-10. [14] Musing A, Ortiz G, Kolar J W. Optimization of the current distribution in press-pack high power IGBT modules[C] //International Power Electronics Conference, Sapporo, Japan, 2010: 1139-1146. [15] Ortiz G, Musing A, Biela J, et al. A 180 MW, 450 kV solid state modulator based on Press Pack IGBT tech- nology[C] //IEEE International Power Modulator and High Voltage Conference Atlanta, USA, 2010: 303-306. [16] O'Neal C B, Mcgee B, Mcpherson B, et al. Advanced materials for high temperature, high performance, wide bandgap power modules[J] . Journal of Electronic Materials, 2016, 45(1): 245-254. [17] Wakeman F, Hemmings D, Findlay W, et al. Pressure contact IGBT, testing for reliability[J] . IEEE Trans Speech Audio Process, 2005. [18] Busca C, Teodorescu R, Blaabjerg F, et al. Dynamic thermal modelling and analysis of press-pack IGBTs both at component-level and chip-level[C] //IECON 39th Annual Conference of the IEEE Industrial Electronics Society, Vienna, Austria, 2013: 677-682. [19] Hasmasan A A, Busca C, Teodorescu R. Electro- thermo-mechanical analysis of high-power press-pack insulated gate bipolar transistors under various mechanical clamping conditions[J] . IEEJ Journal of Industry Applications, 2014, 3(3): 192-197. [20] Poller T, Easier T, Hernes M, et al. Mechanical analysis of press-pack IGBTs[J] . Microelectronics Reliability, 2012, 52(9-10): 2397-2402. [21] Poller T, D’Arco S, Hernes M, et al. Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs[J] . Microelectronics Reliability, 2013, 53(9-11): 1755-1759. [22] Tinschert L, Ardal A R, Poller T, et al. Possible failure modes in Press-Pack IGBTs[J] . Microelectronics Reliability, 2015, 39(6): 903-911. [23] Oukaour A, Tala-Ighil B, Pouderoux B, et al. Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition[J] . Microelectronics Reliability, 2011, 51(2): 386-391. [24] Cova P, Nicoletto G, Pirondi A, et al. Power cycling on press-pack IGBTs: measurements and thermomechanical simulation[J] . Microelectronics Reliability, 1999, 39(6): 1165-1170. [25] Hansen P, Mccluskey P. Failure models in power device interconnects[C] //European Conference on Power Electronics and Applications, Aalborg, Denmark, 2007: 1-9. [26] Bhagath S, Pecht M G. Modeling the effects of mixed flowing gas (MFG) corrosion and stress relaxation on contact interface resistance[J] . Journal of Electronic Packaging, 1993, 115(4): 387-406.
2017, Vol. 32 
