Impacts of Coupled Temperature-Frequency Effects on Partial Discharge Characteristics of High Frequency Solid State Transformer Insulation
Han Shuai1,Li Qingmin2,3,Liu Weijie2,Lu Xu3,Wang Gaoyong4,Wei Xiaoguang4
1. Shandong University Jinan 250061 China; 2. State Key Lab of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University Beijing 102206 China; 3. Beijing Key Lab of HV and EMC North China Electric Power University Beijing 102206 China; 4. Smart Grid Research Institute of State-Grid Company Beijing 102200 China
Abstract:Partial discharge(PD) is one of the main causes of the insulation failure in the high frequency solid state transformer(SST). A comprehensive thermal-electrical test rig is established as to study the impacts of the coupled temperature-frequency effects. Four temperature points from 30℃ to 160℃, together with five frequency points from 10kHz to 50kHz, are chosen to physically model the partial discharge scenario in the SST, and the temperature- and frequency-dependent characteristics of several typical PD parameters are elucidated in details. The experimental results show that, the maximum and the mean discharge amplitudes as well as the discharge times render an increasing tendency with temperature rising, while the frequency-dependent behavior gives a negative correlation. However, the PDIV keeps roughly constant with frequency variation. The frequency-induced of space charge accumulation effect plays a dominant role in the above physical changes, in the meanwhile, the coupled temperature-frequency stress changes the insulation permeability as well as the tangential E-field vector, which executes a prominent impact on the PD development.
韩帅,李庆民,刘伟杰,鲁旭,王高勇,魏晓光. 温-频耦合效应对高频固态变压器绝缘局部放电特性的影响[J]. 电工技术学报, 2015, 30(2): 204-210.
Han Shuai,Li Qingmin,Liu Weijie,Lu Xu,Wang Gaoyong,Wei Xiaoguang. Impacts of Coupled Temperature-Frequency Effects on Partial Discharge Characteristics of High Frequency Solid State Transformer Insulation. Transactions of China Electrotechnical Society, 2015, 30(2): 204-210.
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