基于低频噪声的LED寿命衰减研究

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摘要低频噪声可用来测量LED器件的噪声功率谱,从而能够对器件结构中的缺陷态进行深层次的检测和分析。这种检测具有对器件无损伤、快速测量的优点,又反映了器件结构本身的内部特性,具有良好的应用前景。系统介绍了低频噪声的产生机理及数学模型,并全面分析基于GaN和基于GaAs的LED器件的1/f噪声和GR噪声的功率谱表征的研究成果。从低频噪声表征可以观察到,LED的工作性能完全可以通过1/f和G-R噪声功率谱来分析检测。影响LED器件寿命的主要原因在于有源区内的暗斑以及有源区内外的缺陷态。暗斑和缺陷态的影响衰减的机理还未得到确定解释。

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	杨广华
	李玉兰
	于莉媛

关键词 ： LED, 低频, 1/ G-R

Abstract：Low-frequency noise can be used to measure the noise power spectrum of the LED device, Which can allow to test and analyze the defect states of the device structure in depth. This test has a good prospect, which not only has the advantages of no damage to the device and rapid measurement, but also reflects the internal characteristics of the device structure itself. This paper systematically describes the low-frequency noise generation mechanism and the mathematical model, and introduces comprehensively the research results of the 1/f and GR noise power spectral characterization based on GaN and GaAs LED devices. From the low-frequency noise characteristics of LED it can be observed that LED’s performance can be tested and analyzed by 1/f and G-R noise power spectrum. And the origin affecting the life of the LED device is mainly due to dark spots in active region and defect states inside and outside the active region. The mechanism that dark spots and defect states impact the decay of LED has not yet been determined.

Key words： Serniconductor technology LED low frequency 1/ G-R

收稿日期: 2013-05-13 出版日期: 2014-05-22

PACS:

TN312.8

作者简介: 杨广华男, 1973年生, 博士, 讲师, 主要研究方向为LED及半导体照明。李玉兰女, 1974 年生, 博士, 讲师, 主要研究方向为物流装备及技术。

引用本文:

杨广华, 李玉兰, 于莉媛. 基于低频噪声的LED寿命衰减研究[J]. 电工技术学报, 2013, 28(2增): 239-242. Yang Guanghua, Li Yulan, Yu Liyuan. LED life Attenuation Study Based on Low Frequency Noise. Transactions of China Electrotechnical Society, 2013, 28(2增): 239-242.

链接本文:

http://dgjsxb.ces-transaction.com/CN/Y2013/V28/I2增/239

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