基于共振隧穿机制的太赫兹波振荡器特性模拟

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摘要共振隧穿器件由于其具有高频高速的特点，适用于制作太赫兹波段的振荡源器件。本文主要针对太赫兹波段的共振隧穿二极管（RTD）的振荡特性进行模拟仿真。利用等效电路理论和Pspice软件对共振隧穿振荡器（RTO）的等效电路模型进行振荡频率和功率的模拟计算。在理论计算中将隧穿和渡越时间效应以及寄生元件等制约因素都进行了分析，结果表明通过改进RTD和缝隙天线的结构，共振隧穿振荡器的振荡频率可达1.2THz，输出功率可达到115μW。并且在Pspice仿真环境下进行验证，结果也与理论计算较为相符。

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	牛萍娟
	于莉媛
	毛陆虹
	郭维廉

关键词 ：太赫兹波源, RTD, 振荡器, 振荡特性

Abstract：Because of its high frequency and high speed,resonant tunneling device is suitable for the terahertz oscillator source device. In this paper,the oscillation characteristic of resonant tunneling diodes in THz wave range is simulated. The equivalent circuit theory and Pspice software are used on resonant tunneling oscillator equivalent circuit model for the oscillation frequency and power simulation. In the theoretical calculation,the tunneling and transit-time effects and parasitic elements are analyzed,and the results indicate that by improving the RTD and slot antenna structure,resonant tunneling oscillation frequency can reach 1.2 THz,and the output power can reach 115μW. In the Pspice simulation,the results are more consistent with the theoretical calculation.

Key words： THz wave source RTD oscillator oscillation characteristics

收稿日期: 2013-10-11 出版日期: 2015-01-22

PACS:

TN312.2

基金资助:国家自然科学基金青年基金（11204211），天津科技创新体系及平台建设计划（12TXGCCX00800）和天津市应用基础与前沿技术研究计划自然科学基金青年项目（13JCQNJC00700）资助。

作者简介: 牛萍娟女，1973年生，博士研究生，教授，硕士生导师，研究方向为光源与照明系统。于莉媛女，1980年生，博士研究生，副教授，硕士生导师，研究方向为半导体光电器件。

引用本文:

牛萍娟，于莉媛，毛陆虹，郭维廉. 基于共振隧穿机制的太赫兹波振荡器特性模拟[J]. 电工技术学报, 2014, 29(12): 102-106. Niu Pingjuan,Yu Liyuan,Mao Luhong,Guo Weilian. Simulation of Characteristics of Terahertz Oscillator Based on Resonant Tunneling Mechanism. Transactions of China Electrotechnical Society, 2014, 29(12): 102-106.

链接本文:

http://dgjsxb.ces-transaction.com/CN/Y2014/V29/I12/102

[1] Tonouchi M. Cutting-edge terahertz technology[J]. Nat. Photonics,2007(1): 97-105.
[2] 郭维廉,牛萍娟,李晓云,等. 利用共振隧穿器件制作太赫兹波源[J]. 微纳电子技术,2010,47(10): 595-602. Guo Weilian,Niu Pingjuan,Li Xiaoyun,et al. The fabrication of THz range device by using resonant tunneling diodes[J]. Micronanoelectronic Technology,2010,47(10): 595-602.
[3] 郭维廉,牛萍娟,苗长云. 共振隧穿器件及其集成技术发展趋势和最新进展[J]. 微纳电子技术,2005(7): 298-304. Guo Weilian,Niu Pingjuan,Miao Changyun. The development trend of resonant tunneling devices and integrated technology[J]. Micronanoelectronic Techno- logy,2005(7): 298-304.
[4] Michael Feiginov,Cezary Syldo,Oleg Cojocari,et al. Resonant- tunnelling- diode oscillators operating at frequencies above 1.1THz[J]. Applied Physics Letters,2012,99: 233506.
[5] Masahiro Asada,Safumi Suzuki,Naomichi Kishimoto. Resonant tunneling diodes for sub-terahertz and terahertz oscillators[J]. Japanese Journal of Applied Physics,2008,47(6): 4375-4384.
[6] Suzuki S,Orihashi N,Asada M. Experimental and theoretical characteristics of sub-terahertz and terahertz oscillations of resonant tunneling diodes integrated with slot antennas[J]. Japanese Journal of Applied Physics,2005,44: 7809-7815.
[7] Asada Masahiro,Suzuki Safumi. Terahertz oscillators using electron devices-an approach with resonant tunneling diodes[J]. Ieice Electronics Express,2011,8(14): 1110-1126.
[8] Hinata K,Shiraishi M,Suzuki S. High power THz oscillators with offset-fed slot antenna and high current density resonant tunneling diodes[C]. IRMMW- THz 2009,2009,1: 264-265.
[9] Kensuke Hinata,Masato Shiraishi,Safumi Suzuki,et al. Sub-terahertz resonant tunneling diode oscillators with high output power using offset-fed slot antenna and high current density[J]. Applied Physics Express. 2010(3): 014001.
[10] Suzuki Safumi,Ter anishi At sushi,Hinat a Kensuke,et al. Fundamental oscillation of up to 831 GHz in GaInAs/AlAs resonant tunneling diode[J]. Applied Physics Express,2009,2(5): 054501.
[11] 程玥,许军. 共振隧穿二极管基础电路的模拟与分析[J]. 微纳电子技术,2003,40(7/8): 579-581. Cheng Yue,Xu Jun. Simulation and analysis of resonant tunneling diode base circuit[J]. Micronanoelectronic Technology,2003,40(7): 579-581.
[12] 王伟,孙浩,孙晓玮,等. InP基RTD特性的数值模拟研究[J]. 固体电子学研究与进展,2010,30(3): 317-332. Wang Wei,Sun Hao,Sun Xiaowei,et al. Numerical simulation study on characteristics of InP based RTD [J]. Research and Progress of Solid State Electronics,2010,30(3): 317-332.
[13] 王振坤,梁惠来,郭维廉,等. 共振隧穿二极管的设计和研制[J]. 微纳电子技术,2002,39(7): 13-16. Wang Zhenkun,Liang Huilai,Guo Weilian,et al. Design and fabrication of resonant tunneling diode[J]. Micronanoelectronic Technology,2002,39(7): 13-16.
[14] 牛萍娟,郭维廉,梁惠来,等. 谐振隧穿二极管的直流模型及其双稳态特性[J]. 半导体学报,2001,22(9): 1171-1174. Niu Pingjuan,Guo Weilian,Liang Huilai,et al. The DC model and bistable characteristics of resonant tunneling diode[J]. Chinese Journal of Semiconductors,2001,22(9): 1171-1174.
[15] Mohammad Javad Sharifi,Yasser Mohammad Banadaki. A spice large signal model for resonant tunneling diode and its applications[C]. AIP Conference Procee- dings,2009,1148: 890-893.