基于常通型SiC JFET器件的中低压直流固态断路器研究综述

doi:10.19595/j.cnki.1000-6753.tces.231806

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Abstract

In recent years, with the rapid development of distributed power generation technology and the increase of direct current (DC) loads, the DC distribution network has once attracted wide attention from scholars both domestically and internationally. Due to the low impedance characteristics of the DC distribution network system, when a DC short circuit fault occurs, there is a high amplitude of fault current. Therefore, it is necessary to research fast and reliable DC circuit breakers. DC solid-state circuit breakers (SSCBs) have advantages such as fast response speed and no arc interruption, making them suitable for medium- and low-voltage DC distribution network applications. Meanwhile, with the quick advancement of wide bandgap semiconductor materials technology, normally-on silicon carbide (SiC) junction field-effect transistor (JFET) devices have become one of the ideal choices as the main switch for SSCBs due to their low conduction losses and zero voltage conduction characteristics.
Firstly, this paper introduces the current research and development status of DC SCCBs based on silicon (Si)-based and SiC-based semiconductor devices. The applications of Si-based and SiC-based DC SCCBs in industry are elaborated.
The power flow becomes bidirectional when considering the flexible integration of distributed resources such as photovoltaic, wind power, and energy storage into the DC distribution network. It is necessary to design unidirectional or bidirectional SCCBs for fault line protection based on the configuration of the SCCBs and the fault current direction in the DC lines. This paper analyzes the topology and working principle of low-voltage unidirectional and bidirectional DC SCCBs based on normally-on SiC JFET devices. The research progress regarding overload and short-circuit protection methods is discussed.
Furthermore, the factors influencing voltage and current balancing during the series and parallel operation of the main switch SiC JFET devices in medium-voltage DC SCCBs are analyzed. The topology and voltage balancing methods of medium-voltage DC SCCBs based on normally-on SiC JFET devices in series structure are introduced, and the topology and current balancing methods of medium-voltage DC SCCBs based on normally-on SiC JFETs in parallel structure are summarized. Additionally, the working principles of three types of snubber circuits, namely RC snubber circuit, RCD snubber circuit, and MOV snubber circuit,are introduced, and their performance is evaluated.
Finally, this paper provides development prospects for medium to low-voltage DC SCCBs based on normally-on SiC JFET devices. (1) Improvement methods for voltage balancing in normally-on SiC JFET devices series connected and current balancing in parallel connected devices, as well as new designs for reliable topology structures in medium-voltage DC SCCBs. (2) Failure mechanism investigation of DC SCCBs based on normally-on SiC JFET devices under complex operating conditions. (3) Research on fault detection and identification in DC SCCBs based on normally-on SiC JFET devices. (4) Coordinated protection methods for SCCBs based on multiple normally-on SiC JFET devices.

Key words： DC distribution network solid-state circuit breaker silicon carbide junction field-effect transistor topology snubber circuits

Received: 27 October 2023

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TM561

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	He Dong
	Jang Lei
	Lan Zheng
	Wang Wei
	Shen Zheng

Cite this article:

He Dong,Jang Lei,Lan Zheng等. Review of Research on Medium and Low Voltage DC Solid-State Circuit Breakers Based on Normally-on SiC JFETs[J]. Transactions of China Electrotechnical Society, 2024, 39(22): 7213-7227.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.231806 OR https://dgjsxb.ces-transaction.com/EN/Y2024/V39/I22/7213

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