多物理场下薄膜电容器用聚丙烯材料劣化及诊断方法研究进展

doi:10.19595/j.cnki.1000-6753.tces.241154

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Abstract

Metallized polypropylene film capacitors are subjected to high pulse voltage, high temperature, and mechanical stress for a long time, which causes material degradation and seriously threatens the operational reliability of the entire system. The relevant research on polypropylene materials for film capacitors is summarized in order to clarify the degradation mechanism of film capacitors, grasp the key parameters affecting the degradation of film capacitors, and sort out the reliability and applicability of existing state detection and lifetime prediction methods.
Firstly, under the influence of multiple physical fields, the degradation of polypropylene film materials is closely related to space charge transport, partial discharge phenomenon, self-healing, and breakdown behavior. The intrinsic parameters of the material (such as crystallinity, film thickness, square resistance of the metallized film) and external factors (such as voltage form, pulse frequency, external temperature) can affect the above parameters or processes. The injection and detrapping of space charges are the main factors leading to material degradation. However, traditional space charge measurement methods currently cannot meet the space charge measurement needs of μm level film materials, and there is an urgent need to develop high-resolution space charge measurement methods.
Secondly, electrical stress, thermal stress, mechanical stress, and their coupling effects can affect the aging process of polypropylene materials. These factors first cause changes in the material structure, such as recrystallization, molecular chain breakage, altering the trap characteristics and carrier transport behavior of the material. This is then reflected in the macroscopic performance changes. Therefore, aging tests are very important in the material development process. However, the aging of film capacitor materials under the coupling of multiple physical fields is difficult to reproduce in the laboratory, which means that most current research on the aging of polypropylene materials only considers a single factor. It is urgent to conduct aging experiments under the coupling of multiple physical fields that are close to actual working conditions, in order to clarify the aging mechanism of film capacitor materials. Furthermore, further research is needed on how to decouple multiple stress aging.
Finally, effective diagnostic and lifetime prediction methods can improve the reliability of the system. The aging diagnosis methods for film capacitors include partial discharge diagnosis method, polarization and depolarization current method, tanδ detection method, and capacitance detection method. The DC partial discharge detection method can be used to determine the type of defect and provide guidance for the production process of materials. However, this part of the research is still in its infancy in China. Other diagnostic methods have various shortcomings and deficiencies. It is necessary to develop aging diagnosis methods that combine multiple criteria and means. The methods for lifetime prediction of film capacitors include traditional probability statistical method, probability statistical method considering performance degradation, and prediction method based on machine learning. These lifetime prediction models cannot fully consider failure mechanism, resulting in low prediction accuracy and limited applications. In the future, the lifetime prediction technology of film capacitors can be further developed by in-depth studying the aging mechanism and combining intelligent recognition and machine algorithm.

Key words： Film capacitor polypropylene degradation mechanism diagnostic method aging

Received: 03 July 2024

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TM215

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	Zhang Yunxiao
	Zhang Jiarui
	Cai Yingjian
	Zhou Yuanxiang
	Liu Yuhao

Cite this article:

Zhang Yunxiao,Zhang Jiarui,Cai Yingjian等. Research Progress on Degradation and Diagnostic Methods of Polypropylene Materials for Film Capacitors under Multiple Physical Fields[J]. Transactions of China Electrotechnical Society, 0, (): 2492947-2492947.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.241154 OR https://dgjsxb.ces-transaction.com/EN/Y0/V/I/2492947

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