基于老化补偿的功率模块全生命周期在线结温监测方法

doi:10.19595/j.cnki.1000-6753.tces.230589

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Abstract Online junction temperature (T_J) monitoring of power modules is essential to improve system performance and reliability. T_J estimation method with on-state voltage (V_CE) at high current (OVHC method) has the advantages of sampling bandwidth, control strategy invasion, and hardware integration. Nevertheless, higher requirements are still put forward for the on-state voltage and current online sampling accuracy to ensure T_J estimation precision. Due to the difficulty and cost of online measurement, T_J online monitoring is still in the theoretical research stage, and there are few high-precision engineering applications. Furthermore, most thermal sensitive electrical parameters (TSEPs) are affected by the degradation of power modules, which is a common challenge. Therefore, it is essential to measure and decouple the aging characteristic parameters.
This paper introduces the T_J model, identification method, and online monitoring architecture of OVHC. Then, the high-precision measurement circuit and sampling strategy are proposed. The temperature resolution of V_CE can be increased by over 6 times using dynamically adjustable subtractors and multipliers to form a range adaption circuit, coupled with thermal matching of FRDs and harmonic suppression. To reuse the low precision current sensor of the converter, a current calibration method oriented to T_J accuracy is adopted to eliminate the system error of the sensor. Furthermore, the delay compensation in hardware and the synchronous oversampling strategy in software are proposed. High-quality sampling is realized through circuit design and strategy control without relying on advanced devices. The hardware cost and volume are very small, which creates conditions for practical application.
The influence of aging on OVLC is mainly manifested in the increase of V_CE caused by bond wire shedding, which leads to the drift of T_J model. Therefore, the change of on-state impedance at 0℃ (ΔR_L,0) is derived to characterize the aging process of the module. A sudden-stop control strategy based on high current injection is proposed to address the aging issue. The T_J at stop time is obtained by the on-state voltage method at low current (OVLC method), which is aging insensitive, and the degradation parameter ΔR_L,0 is identified by the V_CE, I_C, and T_J at the stop time. Then ΔR_L,0 is substituted into the original T_J model for aging compensation. Finally, the flow chart of the compensation method is given for reducing the estimation error caused by degradation, realizing the high-precision T_J monitoring throughout the whole life cycle.
Experimental verification is performed on a 600 V/250 kW three-phase inverter system. The sudden-stop control strategy is also used to verify the accuracy of T_J monitoring. Based on the high-precision circuit and sampling strategy, the error of T_J online estimation is less than 5℃. After 300 000 power cycles, the error of online monitoring reaches 22℃ because of the degradation. The compensation method updates the degradation parameter ΔR_L,0=0.032 mΩ, and the error is limited to within 7℃.

Key words： Online junction temperature monitoring on-state collector-emitter voltage high-precision measurement aging compensation parameter identification

Received: 01 May 2023

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	Zheng Dan
	Ning Puqi
	Qiu Zhijie
	Fan Tao
	Wen Xuhui

Cite this article:

Zheng Dan,Ning Puqi,Qiu Zhijie等. Full Life-Cycle Online Junction Temperature Monitoring of Power Module Based on Aging Compensation[J]. Transactions of China Electrotechnical Society, 2024, 39(12): 3705-3717.

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[1] 李武华, 陈玉香, 罗皓泽, 等. 大容量电力电子器件结温提取原理综述及展望[J]. 中国电机工程学报, 2016, 36(13): 3546-3557, 3373.
Li Wuhua, Chen Yuxiang, Luo Haoze, et al.Review and prospect of junction temperature extraction principle of high power semiconductor devices[J]. Proceedings of the CSEE, 2016, 36(13): 3546-3557, 3373.
[2] 宁圃奇, 郑丹, 康玉慧, 等. 基于大电流导通压降法的车用IGBT结温监测方法综述[J]. 电源学报, 2022, 20(2): 161-172.
Ning Puqi, Zheng Dan, Kang Yuhui, et al.Review of junction temperature monitoring methods for IGBT used in vehicles based on on-state voltage at high current[J]. Journal of Power Supply, 2022, 20(2): 161-172.
[3] 魏云海, 陈民铀, 赖伟, 等. 基于IGBT结温波动平滑控制的主动热管理方法综述[J]. 电工技术学报, 2022, 37(6): 1415-1430.
Wei Yunhai, Chen Minyou, Lai Wei, et al.Review on active thermal control methods based on junction temperature swing smooth control of IGBTs[J]. Transactions of China Electrotechnical Society, 2022, 37(6): 1415-1430.
[4] Li Chengmin, Luo Haoze, Li Chushan, et al.Online junction temperature extraction of SiC power mosfets with temperature sensitive optic parameter (TSOP) approach[J]. IEEE Transactions on Power Electronics, 2019, 34(10): 10143-10152.
[5] Luo Haoze, Mao Junjie, Li Chengmin, et al.Online junction temperature and current simultaneous extraction for SiC MOSFETs with electro- luminescence effect[J]. IEEE Transactions on Power Electronics, 2022, 37(1): 21-25.
[6] Liu Ping, Chen Changle, Zhang Xing, et al.Online junction temperature estimation method for SiC modules with built-in NTC sensor[J]. CPSS Transa- ctions on Power Electronics and Applications, 2019, 4(1): 94-99.
[7] Zhou Yu, Shi Wei, Tang Junsong, et al.Dynamic junction temperature estimation via built-in negative thermal coefficient (NTC) thermistor in high power IGBT modules[C]//2017 IEEE Applied Power Elec- tronics Conference and Exposition (APEC), Tampa, FL, USA, 2017: 772-775.
[8] 王莉娜, 邓洁, 杨军一, 等. Si和SiC功率器件结温提取技术现状及展望[J]. 电工技术学报, 2019, 34(4): 703-716.
Wang Lina, Deng Jie, Yang Junyi, et al.Junction temperature extraction methods for Si and SiC power devices-a review and possible alternatives[J]. Transactions of China Electrotechnical Society, 2019, 34(4): 703-716.
[9] Griffo A, Wang Jiabin, Colombage K, et al.Real-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs[J]. IEEE Transactions on Industrial Electronics, 2018, 65(3): 2663-2671.
[10] Cao Han, Ning Puqi, Wen Xuhui, et al.An electrothermal model for IGBT based on finite differential method[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 673-684.
[11] Mukunoki Y, Horiguchi T, Nakatake H, et al.A comparative study of SPICE models for an SiC- MOSFET[C]//PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2019: 1-5.
[12] Zheng Dan, Kang Yuhui, Cao Han, et al.Monitoring of SiC MOSFET junction temperature with on-state voltage at high currents[J]. Chinese Journal of Electrical Engineering, 2020, 6(3): 1-7.
[13] Cao Han, Ning Puqi, Chai Xiaoguang, et al.Online monitoring of IGBT junction temperature based on V_ce measurement[J]. Journal of Power Electronics, 2021, 21(2): 451-463.
[14] Yu Bin, Wang Li, Ahmed D.Drain-source voltage clamp circuit for online accurate ON-state resistance measurement of SiC MOSFETs in DC solid-state power controller[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 331-342.
[15] Gelagaev R, Jacqmaer P, Driesen J.A fast voltage clamp circuit for the accurate measurement of the dynamic on-resistance of power transistors[J]. IEEE Transactions on Industrial Electronics, 2015, 62(2): 1241-1250.
[16] Ghimire P, de Vega A R, Beczkowski S, et al. An online V_ce measurement and temperature estimation method for high power IGBT module in normal PWM operation[C]//2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE ASIA), Hiroshima, Japan, 2014: 2850-2855.
[17] Mocevic S, Mitrovic V, Wang Jun, et al.Gate-driver integrated junction temperature estimation of SiC MOSFET modules[C]//IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021: 4965-4980.
[18] Yang Fei, Ugur E, Akin B.Evaluation of aging's effect on temperature-sensitive electrical parameters in SiC mosfets[J]. IEEE Transactions on Power Electronics, 2020, 35(6): 6315-6331.
[19] 杨舒萌, 孙鹏菊, 王凯宏, 等. 恒流驱动下基于V_{eE_max}的IGBT模块解耦老化影响的结温测量方法[J]. 电工技术学报, 2022, 37(12): 3038-3047, 3072.
Yang Shumeng, Sun Pengju, Wang Kaihong, et al.Junction temperature measurement method of IGBT modules based on V_{eE_max} under constant-current source drive which decouples fatigue effect[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3038-3047, 3072.
[20] 康建龙, 辛振, 陈建良, 等. SiC MOSFET短路失效与退化机理研究综述及展望[J]. 中国电机工程学报, 2021, 41(3): 1069-1084.
Kang Jianlong, Xin Zhen, Chen Jianliang, et al.Review and prospect of short-circuit failure and degradation mechanism of SiC MOSFET[J]. Pro- ceedings of the CSEE, 2021, 41(3): 1069-1084.
[21] Eleffendi M A, Johnson C M.In-service diagnostics for wire-bond lift-off and solder fatigue of power semiconductor packages[J]. IEEE Transactions on Power Electronics, 2017, 32(9): 7187-7198.
[22] Hanif A, Yu Yuechuan, DeVoto D, et al. A comprehensive review toward the state-of-the-art in failure and lifetime predictions of power electronic devices[J]. IEEE Transactions on Power Electronics, 2019, 34(5): 4729-4746.
[23] Jia Yingjie, Huang Yongle, Xiao Fei, et al.Impact of solder degradation on V_CE of IGBT module: experiments and modeling[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2022, 10(4): 4536-4545.
[24] Singh A, Anurag A, Anand S.Evaluation of V_ce at inflection point for monitoring bond wire degradation in discrete packaged IGBTs[J]. IEEE Transactions on Power Electronics, 2017, 32(4): 2481-2484.
[25] Arya A, Chanekar A, Deshmukh P, et al.Accurate online junction temperature estimation of IGBT using inflection point based updated I-V characteristics[J]. IEEE Transactions on Power Electronics, 2021, 36(9): 9826-9836.
[26] 丁雪妮, 陈民铀, 赖伟, 等. 多芯片并联IGBT模块老化特征参量甄选研究[J]. 电工技术学报, 2022, 37(13): 3304-3316, 3340.
Ding Xueni, Chen Minyou, Lai Wei, et al.Selection of aging characteristic parameter for multi-chips parallel IGBT module[J]. Transactions of China Electrotechnical Society, 2022, 37(13): 3304-3316, 3340.
[27] 艾盛祥, 曾正, 王亮, 等. 功率模块封装键合线的通流能力: 模型与实证[J]. 电工技术学报, 2022, 37(20): 5227-5240.
Ai Shengxiang, Zeng Zheng, Wang Liang, et al.Ampacity of bonding wire for power module packaging: model and experiment[J]. Transactions of China Electrotechnical Society, 2022, 37(20): 5227-5240.
[28] 邓二平, 严雨行, 陈杰, 等. 功率器件功率循环测试技术的挑战与分析[J]. 中国电机工程学报, 2023, 43(13): 5132-5151.
Deng Erping, Yan Yuxing, Chen Jie, et, al. Power cycling test technologies for power semiconductor devices challenges and analysis[J]. Proceedings of the CSEE, 2023, 43(13): 5132-5151.
[29] JEDEC Solid State Technology Association. JESD51- 14 Transient dual interface test method for the measurement of the thermal resistance junction-to- case of semiconductor devices with heat flow through a single path[S]. Virginia, USA: JEDEC Solid State Technology Association, 2010.
[30] Zheng Dan, Ning Puqi, Chai Xiaoguang, et al.Accurate evaluation of cooling system capability of three-phase IGBT-based inverter[J]. Chinese Journal of Electrical Engineering, 2021, 7(1): 73-78.