基于变电阻驱动的SiC器件开关轨迹协同调控

doi:10.19595/j.cnki.1000-6753.tces.221116

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Abstract Compared to Si counterparts, the faster switching speed of the SiC device brings lower switching losses. However, the higher dv/dt and di/dt also make it suffer from serious switching issues such as overshoot, oscillation, and crosstalk, which greatly limits the electro-thermal margin of the SiC device. Therefore, the switching trajectory of the SiC device needs to be optimized to achieve the coordinated optimization of switching losses and EMI. Besides, the parameters of the conventional gate driver (CGD) and snubber circuit are fixed, which fails to simultaneously manage all switching issues. The active gate driver (AGD) can regulate the switching trajectory. However, existing methods generally optimize a single switching parameter, unable to achieve overall improvement and coordination of the switching performance. Thus, this paper models the characteristic parameters of switching trajectories in stages and proposes a stage-by-stage coordinated optimization strategy. In addition, a four-stage variable resistance AGD is implemented to realize the coordinated optimization of each characteristic parameter.
Firstly, to evaluate the switching trajectory of the SiC device, six sets of key switching trajectory characteristic parameters, including switching loss, overshoot, oscillation, crosstalk, slew rates of voltage and current, and switching delay, are employed to reveal the regulation of the gate resistance on the switching trajectory. Secondly, based on the four-stage switching model of the SiC device and the regulation rule of the gate resistance, the optimal gate resistance of each stage is quantitatively designed with the constraint of the damping ratio of the gate loop. Thirdly, a four-stage variable resistance AGD circuit with timing control logic based on the Gray code is proposed to switch the gate resistance in each stage, thus realizing the regulation of switching trajectory. Finally, three groups of typical CGDs are adopted as control groups. According to the comparative experimental results, it is proved that the proposed method and the AGD circuit are competent in realizing the coordinated optimization of multiple characteristic parameters of the switching trajectory of the SiC device.
The comparative experiments under different bus voltages and different load currents present that the CGD1 with smaller resistance brings the most severe switching oscillation and crosstalk, along with the largest switching overshoot; The CGD2 with a larger resistance produces the largest switching delay and switching losses, alongside the slowest switching speed; The CGD3 designed with the optimal damping ratio of the gate loop is a trade-off between CGD1 and CGD2. Compared with CGD1, the switching overshoot and crosstalk are slightly reduced. However, the switching loss and switching delay are significantly increased. It can be seen that the optimization under the CGD with fixed gate resistance will inevitably deteriorate the performance of other characteristic parameters while improving one. On the contrary, the proposed AGD presents the shortest switching delay and the fastest switching speed as CGD1, while ensuring the similar suppression effect of switching overshoot, oscillation, and crosstalk as CGD2. In addition, the coordinated optimization of multiple characteristic parameters of the switching trajectory of the SiC device is implemented.
The following conclusions can be drawn from this paper: (1) The switching trajectory of the SiC device is observable and controllable. (2) The characteristic parameters of the switching trajectory can be regulated in stages to achieve coordinated optimization. (3) The proposed four-stage variable resistance co-optimization method and the AGD circuit can realize the coordinated regulation of multiple characteristic parameters of the switching trajectory, which can effectively suppress the oscillation, overshoot, and crosstalk of the SiC device while ensuring the faster switching speed and lower switching loss.

Key words： SiC MOSFET device active gate driver four-phase varied gate resistance switching trajectory regulation multi-objective coordination

Received: 14 June 2022

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TM464

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	Zou Mingrui
	Zeng Zheng
	Sun Peng
	Wang Liang
	Wang Yulei

Cite this article:

Zou Mingrui,Zeng Zheng,Sun Peng等. Coordinated Switching Trajectory Regulation of SiC Device Using Variable Resistance Gate Driver[J]. Transactions of China Electrotechnical Society, 2023, 38(16): 4286-4300.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.221116 OR https://dgjsxb.ces-transaction.com/EN/Y2023/V38/I16/4286

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