重复频率下GaAs光电导开关的热积累研究

doi:10.19595/j.cnki.1000-6753.tces.221947

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Abstract Gallium arsenide photoconductive semiconductor switch (GaAs PCSS) is considered as one of the most promising ultrafast solid-state switching devices due to its excellent performance Such as switching speed, trigger jitter, output power and repetition rate. GaAs PCSS usually operates in two different modes: linear and nonlinear, but the thermal effect generated by the high carrier density filamentary current in the nonlinear mode can easily cause a sharp rise in the temperature inside the device, resulting in a decrease in device reliability and even thermal breakdown, which limits the further application of GaAs PCSS. Aiming at the thermal accumulation problem in GaAs PCSS at repetitive rates. Based on the theoretical analysis, a two-dimensional small-size model was constructed. Under the condition of power density of 5.04×10¹⁶ W/m³, the temperature distribution of the internal filamentary current of GaAs PCSS was simulated by finite element analysis software, and the temporal and spatial variation of the internal temperature of the PCSS was obtained. The simulation results show that, repetition rate and filamentary current diameter are the key physical parameters influencing the thermal accumulation in the PCSS, due to the influence of physical parameters such as negative differential mobility and thermal conductivity at high electric field.
Firstly, considering the operation stability of nonlinear GaAs PCSS, the transient temperature distribution in the PCSS is investigated at 1 kHz repetition rate. The results show that the temperature increases with time and gradually diffuses deep into the material. At t = 5 ms, the highest temperature of region near the anode x = 0.543 mm, y = 0.033 mm can reach 497.49 K.
Secondly, the internal temperature variation of the PCSS is studied at different repetition rates when the filamentary current diameter d = 50 μm. The results show that the thermal effect is not obvious as the repetition rate is lower than 100 Hz. When the repetition rate is higher than 100 Hz, the increment of peak temperature increases with the increase of repetition rate, and the thermal accumulation in the switch is obvious. The temperature of region at x = 0.543 mm gradually decreases with the increase of depth, and the temperature is almost room temperature at y≥0.3 mm. At 10 kHz, the temperature near the anode is higher than other parts. When t = 5 ms, x = 0.543 mm, y = 0.033 mm, the highest temperature can reach 1 262.73 K.
Finally, the influence and mechanism of different filamentary current diameters on the temperature in the switch at 1 kHz repetition rate are studied. When the diameter of the filamentous current is small (≤10 μm), the thermal accumulation effect inside the switch is not obvious; when the diameter is larger (>10 μm), the temperature increases exponentially with the increase of the diameter of the filament current. The temperature at x = 0.543 mm decreases with the increase of depth, and the temperature at y≥0.4 mm is almost room temperature. When d = 100 μm and t = 5 ms, the temperature at x = 0.543 mm and y = 0.033 mm can reach up to 871.43 K, which is consistent with the thermal damage phenomenon of recent experiments. The results show that the increasing of thermal dissipation time can make the temperature diffuse deeper into the material. The temperature rise inside the switch is a physical process of continuous collision, ionization and recombination of electrons and lattice atoms (phonons) in the high field domain.
This relevant research is expected to provide a theoretical guidance for improving the thermal breakdown issue and longevity of PCSS at repetitive rate conditions.

Key words： GaAs PCSS thermal accumulation effect repetition rate filamentary current

Received: 12 October 2022

PACS:	O473
	TM89

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	Gao Rongrong
	Xu Ming
	Luo Wei
	Si Xinyang
	Liu Qian

Cite this article:

Gao Rongrong,Xu Ming,Luo Wei等. Research on Thermal Accumulation of GaAs Photoconductive Semiconductor Switch at Repetition Rates[J]. Transactions of China Electrotechnical Society, 2023, 38(15): 4010-4018.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.221947 OR https://dgjsxb.ces-transaction.com/EN/Y2023/V38/I15/4010

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