基于GaN器件的高频高效LLC谐振变换器

doi:10.19595/j.cnki.1000-6753.tces.L90259

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Abstract At high frequencies, traditional power devices cause large losses in the device itself, which severely restricts the demand for high-efficiency and high-power density switching converters. The emergence of the third-generation wide-gap semiconductor device GaN can further improve the efficiency of the converter and power density. GaN devices have the characteristics of fast switching speed and no reverse recovery loss. This article uses this feature, combined with the PCB planar transformer, to apply it to the LLC resonant converter, and finally designed a 48V input and 12V output, 120W, 1MHz experimental model. The experimental results show that the size of the experimental model has been greatly reduced, through the use of GaN devices. The design provides a reference for the use of GaN devices for high power density converter.

Key words： LLC resonant converter GaN power tube plane transformer parasitic parameters electromagnetic simulation

Received: 02 September 2020

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TM46

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	Articles by authors
	Tong Jun
	Wu Weidong
	Li Facheng
	Du Guanghui

Cite this article:

Tong Jun,Wu Weidong,Li Facheng等. High Frequency and High Efficiency LLC Resonant Converter Based on GaN Device[J]. Transactions of China Electrotechnical Society, 2021, 36(zk2): 635-643.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90259 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/Izk2/635

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