考虑寄生参数的功率MOSFET开关损耗简化计算方法

doi:10.19595/j.cnki.1000-6753.tces.L90172

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Abstract During the converter design process, the calculation of the switching loss of the Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) is the theoretical basis for the converter heat dissipation design and parameter optimization. Existing methods for calculating switching losses need to solve differential equations in the analytical modeling process, and the calculation process is relatively complicated, which is inconvenient for practical engineering applications. This paper presents a simplified calculation method for MOSFET switching losses. Firstly, the formulas for the value of nonlinear capacitance and transconductance coefficient of MOSFET were derived, and the modals in the switching process of MOSFET was refined. Then, in order to avoid solving differential equations, the current and voltage waveforms of each mode were subjected to piecewise linear approximation processing. The duration of the corresponding mode and the simplified analytical expressions of current, voltage and switching loss were obtained respectively. Finally, comparison analysis between calculation results and simulation results of the Pspice model verifies the accuracy of the proposed calculation method.

Key words： Power MOSFET parasitic parameters switching loss calculation model

Received: 30 June 2020

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TM46

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	Articles by authors
	Ma Kun
	Shi Yong
	Su Jianhui
	Lai Jidong
	Yu Xiang

Cite this article:

Ma Kun,Shi Yong,Su Jianhui等. Simplified Model of Power MOSFET Switching Loss Considering the Parasitic Parameters[J]. Transactions of China Electrotechnical Society, 2021, 36(zk2): 591-599.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90172 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/Izk2/591

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