不同老化试验方法下SiC MOSFET失效机理分析

doi:10.19595/j.cnki.1000-6753.tces.191409

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Abstract SiC MOSFETs are gradually entering the market due to their excellent electrothermal characteristics, and their long-term reliability has become the focus of attention. The power cycling test is the most important aging test for device reliability assessment. MOSFET has three conduction modes corresponding to three different power cycling test methods. To study and compare the failure mechanism and failure parameters evolution of SiC MOSFET under different aging test methods, the power cycling tests were carried out under different modes, focusing on forward MOSFET mode and body diode mode. Since the interface trap in the SiC MOSFET can cause the threshold voltage drift, a judgment criterion and a corresponding power cycling test method were proposed to minimize the influence of the threshold voltage drift on the test result. The on-line measurement of junction temperature, on-state voltage drop and thermal resistance during the test were achieved. The results show that the main failure mode in both modes is bond wire fatigue, but the electrothermal feedback mechanism after bonding wire fatigue is different, resulting in different degradation laws and lifespan. The life in diode mode is about twice that in the forward MOSFET mode under the same thermal conditions.

Key words： SiC MOSFET power cycling test conduction mode threshold voltage drift junction temperature measurement failure mechanism

Received: 28 October 2019

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	Chen Jie
	Deng Erping
	Zhao Zixuan
	Wu Yuxuan
	Huang Yongzhang

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Chen Jie,Deng Erping,Zhao Zixuan等. Failure Mechanism Analysis of SiC MOSFET under Different Aging Test Methods[J]. Transactions of China Electrotechnical Society, 2020, 35(24): 5105-5114.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.191409 OR https://dgjsxb.ces-transaction.com/EN/Y2020/V35/I24/5105

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