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| High Performance 750A/6500V IGBT Module Based on Full-Copper Processes |
| Liu Guoyou1,2, Luo Haihui1,3, Zhang Hongxin1,3, Wang Yangang1,3, Pan Zhaohai1,3 |
1. State Key Laboratory of Advanced Power Semiconductor Devices Zhuzhou 412001 China;
2. Zhuzhou CRRC Times Electric Co. Ltd Zhuzhou 412001 China;
3. Zhuzhou CRRC Times Semiconductor Co. Ltd Zhuzhou 412001 China |
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Abstract The mismatch of coefficient of thermal expansion (CTE) of heterogeneous materials in high power IGBT modules is the main mechanism of module fatigue and aging failure. The idea of full-copper power interconnection in power module was proposed in order to reduce the difference of CTE between heterogeneous materials and improve its power cycle capability and long-term operation reliability in this paper. The new technologies such as IGBT chip copper metallization, copper wire bonding and copper busbar terminal ultrasonic welding were systematically investigated. A complete set of process technology for full-copper packaging of IGBT module was realized and 750A/6500V high performance IGBT module was developed for the first time. Compared with the traditional aluminum process, the full-copper process module reduced the conduction loss by 10%, and increased more than 20% higher surge current capability and sixteen times higher power cycling capability as well. The operation ruggedness and application reliability of power module were also improved.
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Received: 12 November 2019
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2020, Vol. 35 
