Transactions of China Electrotechnical Society  2020, Vol. 35 Issue (2): 425-434    DOI: 10.19595/j.cnki.1000-6753.tces.181718
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Partial Discharge Characteristics of Epoxy Resin Needle-Plate Defect under Exponential Decay Pulse and Sinusoidal Voltage
Mi Yan1, Gui Lu1,2, Liu Lulu1, Deng Shengchu3, Ouyang Wenmin4
1. State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China;
2. Nanning Power Supply Bureau Guangxi Power Grid Company 530031 China;
3. Foshan Power Supply Bureau Guangdong Power Grid Company 528000 China;
4. State Key Laboratory of Advanced Power Transmission Technology Beijing 102209 China

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Abstract  Epoxy needle-plate defects were fabricated to simulate the defects of metal protrusions in the epoxy resin of the saturable reactor in this paper. The partial discharge (PD) characteristics of epoxy resin under exponential decay pulse voltage and sinusoidal voltage were studied. The comparison and analysis were conducted from the aspects of PD inception voltage, PD number, average PD magnitude and PD distribution. The PD characteristics at 25℃ and 110℃ were also compared and analyzed in this paper. It is found that under the same amplitude exponential decay pulse voltage and sinusoidal voltage, the PD inception voltage under the pulse voltage is lower, PD magnitude is larger and PD number is smaller. For the same applied voltage, the PD inception voltage at 110℃ is lower than that at 25℃, the average PD magnitude is greater, and the PD number is reduced. The experimental results can provide a basis for optimal insulation design of saturable reactor under exponential decay pulse voltage.
Key wordsSaturable reactor      epoxy resin      partial discharge      exponential decay      pulse voltage     
Received: 05 November 2018      Published: 17 January 2020
PACS: TM835  
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Mi Yan
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Mi Yan,Gui Lu,Liu Lulu等. Partial Discharge Characteristics of Epoxy Resin Needle-Plate Defect under Exponential Decay Pulse and Sinusoidal Voltage[J]. Transactions of China Electrotechnical Society, 2020, 35(2): 425-434.
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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.181718     OR     https://dgjsxb.ces-transaction.com/EN/Y2020/V35/I2/425
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