SiC MOSFET短路检测与保护研究综述

doi:10.19595/j.cnki.1000-6753.tces.181433

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Abstract

With the development of wide bandgap semiconductor devices, SiC MOSFETs are widely used in the industrial field, and the short-circuit protection of SiC MOSFETs is also receiving more and more attention. In this paper, the short circuit types of SiC MOSFETs are discussed, and the key waveforms under different short circuit types are given. Then, this paper summarizes the short-circuit detection and protection methods of SiC MOSFETs in recent years. The principles of de-saturation detection, inductance detection, gate voltage detection and short circuit detection based on Rogowski coil are introduced in detail. The advantages and disadvantages of various detection schemes are summarized. Finally, a method of decreasing grid-voltage short-circuit protection is proposed, which realizes two-stage fast protection of SiC MOSFET under short circuit condition.

Key words： SiC MOSFET short-circuit protection desaturation detection method decreasing gate-voltage

Received: 30 August 2018 Published: 18 November 2019

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TM93

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	Articles by authors
	Wu Haifu
	Zhang Jianzhong
	Zhao Jin
	Zhang Yaqian

Cite this article:

Wu Haifu,Zhang Jianzhong,Zhao Jin等. Review of Short-Circuit Detection and Protection of Silicon Carbide MOSFETs[J]. Transactions of China Electrotechnical Society, 2019, 34(21): 4519-4528.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.181433 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/I21/4519

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