模块化多电平换流阀IGBT器件功率损耗计算与结温探测

doi:10.19595/j.cnki.1000-6753.tces.180635

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Abstract Half-bridge sub-module is the core unit of the modular multilevel converter (MMC) in the flexible dc transmission system. It is of great importance to accurately calculate the power loss of IGBT devices in sub-module for the junction temperature detection of insulated gated bipolar transistor (IGBT) under the operating conditions. And the estimation of the temperature swings is the essential for reliability study and safety of the MMC. Different from two-level power converters, the MMC has inherent dc-bias in arm current. Consequently, a analytical thermal modeling method is proposed based on electro-thermal coupling in this paper. The device current reconstruction method was studied for sub-module and the average loss calculation model was constructed based on switch cycle. Based on transient thermal impedance, the thermal network model of sub-module was established to calculate the junction temperature of IGBT devices. The power loss and transient temperature change of the power devices were calculated under operating parameters with a case study on a 2MW MMC system. More importantly, the speed of calculation is 1 000 times than time-domain simulation. The FEM model is used to verify the validity of the proposed electro-thermal coupling model.

Key words： Modular multilevel converter half-bridge sub-module power loss Junction temperature detection electro-thermal coupling model

Received: 19 April 2018 Published: 05 May 2019

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TM46

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	Wang Xiping
	Li Zhigang
	Yao Fang

Cite this article:

Wang Xiping,Li Zhigang,Yao Fang. Power Loss Calculation and Junction Temperature Detection of IGBT Devices for Modular Multilevel Valve[J]. Transactions of China Electrotechnical Society, 2019, 34(8): 1636-1646.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.180635 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/I8/1636

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