Si和SiC功率器件结温提取技术现状及展望

doi:10.19595/j.cnki.1000-6753.tces.180296

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Abstract Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method.

Key words： Power semiconductor devices Si SiC junction temperature extraction temperature sensitive parameters

Received: 12 March 2018 Published: 01 March 2019

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TM464

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	Wang Lina
	Deng Jie
	Yang Junyi
	Li Wuhua

Cite this article:

Wang Lina,Deng Jie,Yang Junyi等. Junction Temperature Extraction Methods for Si and SiC Power Devices—a Review and Possible Alternatives[J]. Transactions of China Electrotechnical Society, 2019, 34(4): 703-716.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.180296 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/I4/703

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