An Improved Lumped-Charge Circuit Model for High Power PIN Diode
LiXin1, Luo Yifei1, Duan Yaoqiang2, Liu Binli1, Huang Yongle1
1. National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China; 2. School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
Abstract This paper presents an improved circuit model of high power PIN diode based on lumped-charge model. The traditional lumped-charge model has a relatively poor simulation accuracy by using the effective excess carrier lifetime model without considering the relationship between carrier lifetime and injection charge concentration. Firstly, the traditional modelling method of PIN diode was studied. The variation of carrier lifetime with the injection concentration and temperature was discussed. Then,the influence of them was added to the proposed lumped-charge model. Considering the operation of PIN diode is changed with temperatures, the temperature function of the physical parameters in the model was given to get the static and transient temperature characteristics. The model was implemented into circuit simulation platform PSPICE. Finally, the anti-parallel free-wheeling diode in the 1 700 V/1 000 A IGBT module was used for experiments. The comparisons between the simulated and measured characteristics verify the accuracy of the model.
LiXin,Luo Yifei,Duan Yaoqiang等. An Improved Lumped-Charge Circuit Model for High Power PIN Diode[J]. Transactions of China Electrotechnical Society, 2019, 34(3): 506-515.
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2019, Vol. 34 
