中高压大功率IGBT数字有源门极开环分级驱动技术

doi:10.19595/j.cnki.1000-6753.tces.170180

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Abstract The high-power IGBT is a key component in the medium-high voltage and large-capacity power electronic converter system, while the gate drive technology is a critical factor influencing the performance of IGBT devices and converter system. This paper theoretically analyzed the IGBT gate drive control technology, proposed an open-loop hierarchical drive scheme, and designed a specific digital drive circuit based on the FPGA. The comparisons of the designed driver with the Concept driver through experiments show that the designed driver can effectively reduce switching delay time without degrading other parameters (reverse recovery current, turn-off overvoltage, di_C/dt, dv_CE/dt).

Key words： High-power insulation gate bipolar transistor digital hierarchical drive open-loop hierarchical

Received: 27 February 2017 Published: 24 May 2018

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TM46

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	Hu Liangdeng
	Xiao Mingkai
	Lou Xujie

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Hu Liangdeng,Xiao Mingkai,Lou Xujie. Open-Loop Hierarchical Control Technology of High-Power IGBT Digital Active Gate Drive[J]. Transactions of China Electrotechnical Society, 2018, 33(10): 2365-2375.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.170180 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I10/2365

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