基于SiC MOSFET直流固态断路器关断初期电压尖峰抑制方法

doi:10.19595/j.cnki.1000-6753.tces.170061

Abstract
Figure/Table
References
Related Citation (6)

Download: PDF (36804 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract Forthe transient overvoltage and oscillation phenomena in a solid-state DC circuit breaker based on silicon carbide metal oxide semiconductor field-effect transistor (SiC-MOSFET)caused by its high switching-off speed, a possible solution method wasproposed in this paper. First, an equivalent circuit model for SiC MOSFET was established, and the impact of different stray inductances on theturn-off initial stage voltage waveforms of theDCcircuitbreakerwas analyzed. And then, according tothe difference in energy absorbedby metal oxygen varistors(MOVs) with different rated voltage levels, a voltage overshoot suppression method was presented,in which another MOV was used as a snubber circuit. Furthermore, on the basis of its operation principle and suppressive effects, a basicprinciple was presented on how to select the snubber MOV. Finally,an experimental platform of SiC MOSFET-based DC circuit breaker was established, switching off characteristics were analyzed and compared at different stray inductances and different solid-state devices. The experimental results show thattheSiC MOSFET-based DCcircuit breaker hasrelatively serious voltage overshoot and oscillation comparedwith Si IGBT-based breaker, whichis more obvious with increasing stray inductance. And the feasibility of proposed method is also verified.

Key words： Silicon carbide metal oxide semiconductor field-effect transistor DC solid-state circuit breaker snubber circuit metal oxygen varistor

Received: 16 January 2017 Published: 14 March 2018

PACS:

TM56

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	LiHui
	LiaoXing
	linXiao
	Hongwei
	Yao Ran
	Huang Zhangjian

Cite this article:

LiHui,LiaoXing,linXiao等. Voltage Overshoot Suppression Method of SiC MOSFET-Based DC Solid-State Circuit Breaker at Turn-Off Initial Stage[J]. Transactions of China Electrotechnical Society, 2018, 33(5): 1058-1067.

URL:

https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.170061 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I5/1058

[1] 吴卫民, 何远彬, 耿攀, 等. 直流微网研究中的关键技术[J]. 电工技术学报, 2012, 27(1): 98-106.
Wu Weimin, He Yuanbin, Geng Pan, et al.Key technologies for DC micro-grids[J]. Tansactions of China Electrotechnical Society, 2012, 27(1): 98-106.
[2] 朱童, 余占清, 曾嵘, 等. 混合式直流断路器模型及其操作暂态特性研究[J]. 中国电机工程学报, 2016, 36(1): 18-30.
Zhu Tong, Yu Zhanqing, Zeng Rong, et al.Transient model and operation characteristics researches of hybrid DC circuit breaker[J]. Proceedings of the CSEE, 2016, 36(1): 18-30.
[3] 李露露, 雍静, 梁仕斌, 等. 民用低压直流供电系统保护综述[J].电工技术学报, 2015, 30(22): 133-143.
Li Lulu, Yong Jing, Liang Shibin, et al.A review of civil low voltage DC distribution system protection[J]. Transactions of China Electrotechnical Society, 2015, 30(22) : 133-143.
[4] 温家良, 吴锐, 彭畅, 等. 直流电网在中国的应用前景分析[J]. 中国电机工程学报, 2012, 32(13): 7-12.
Wen Jialiang, Wu Rui, Peng Chang, et al.Analysis of DC grid prospects in China[J]. Proceedings of the CSEE, 2012, 32(13): 7-12.
[5] 雍静, 徐欣, 曾礼强, 等. 低压直流供电系统研究综述[J]. 中国电机工程学报, 2013, 33(7): 42-52.
Yong Jing, Xu Xin, Zeng Liqiang, et al.A review of low voltage DC power distribution system[J]. Proceedings of the CSEE, 2013, 33(7): 42-52.
[6] Valle-Mayorga J, Gutshall C P, Phan K M, et al.High temperature silicon-on-insulator gate driver for SiC-FET power modules[J]. IEEE Transactions on Power Electronics, 2012, 27(11): 4417-4424.
[7] Funaki T, Barlow J C, Junghans J, et al.Power conversion with SiC devices at extremely high ambient temperatures[J]. IEEE Transactions on Power Electronics, 2007, 22(4):1321-1329.
[8] Friedrichs P, Kimoto T, Ley L, et al.Silicon carbide[S]. NewYork: Wiley, 2010: 412-428.
[9] Shen Z J, Sabui G, Miao Zhenyu, et al.Wide-bandgap solid-state circuit breakers for DC power systems: device and circuit considerations[J]. IEEE Transactions on Electron Devices, 2015, 62(2):294-300.
[10] Kempkes M, Roth I, Gaudreau M.Solid-state circuit breakers for medium voltage DC power[C]//IEEE Electric Ship Technologies Symposium, Alexandria, USA, 2011: 254-257.
[11] Shen Z J, Miao Zhenyu, Roshandeh A M.Solid state circuit breakers for DC micrgrids: current status and future trends[C]//The first International Conference on DC Microgrids, Atlanta, USA, 2015: 228-233.
[12] Zhang Yuan, Liang Y C.Over-current protection scheme for SiC power MOSFET DC circuit breaker[C]//Energy Conversion Congress and Exposition, Pittsburgh, USA, 2014: 1968-1971.
[13] 梁美, 郑琼林, 可翀, 等. SiC MOSFET、Si CoolMOS和IGBT 的特性对比及其在DAB 变换器中的应用[J]. 电工技术学报, 2015, 30(12): 41-50.
Liang Mei, Zheng Qionglin, Ke Chong, et al.Performance comparison of SiC MOSFET, Si CoolMOS and IGBT for DAB Converter[J]. Tansactions of China Electrotechnical Society, 2015, 30(12): 41-50 .
[14] Fabre J, Ladoux P, Piton M.Characterization and Implementation of dual-SiC MOSFET modules for future use in traction converters[J]. IEEE Transactions on Power Electronics, 2015, 30(8): 4079-4090.
[15] 陈政宇, 余占清, 吕纲, 等. 基于IGCT串联的10kV直流混合断路器研究[J]. 中国电机工程学报, 2016, 36(2): 317-326.
Chen Zhengyu, Yu Zhanqing, Lü Gang, et al.Researches on 10 kV DC hybrid circuit breaker based on IGCT series[J]. Proceedings of the CSEE, 2016, 36(2):317-326.
[16] Feng Lei, Gou Ruifeng, Zhuo Fang, et al.Development of a 10 kV solid-state DC circuit breaker based on press-pack IGBT for VSC-HVDC system[C]//The 8th International Power Electronics and Motion Control Conference, Hefei, China, 2016: 1-7.
[17] Vodyakho O, Steurer M, Neumayr D, et al.Solid-state fault isolation devices: application to future power electronics-based distribution systems[J]. IET Electric Power Applications, 2011, 5(6): 521-528.
[18] Wittig B, Fuchs F.Analysis and comparison of turn-off active gate control methods for low-voltage power MOSFETs with high current ratings[J]. IEEE Transactions on Power Electronics, 2012, 27(3): 1632-1640.
[19] Park S, Jahns T M.Flexible dv/dt and di/dt control method for insulated gate power switches[J]. IEEE Transactions on Industry Applications, 2012, 39(3): 657-664.
[20] Meyer C, Schroder S, De Doncker R W. Solid-state circuit breakers and current limiters for medium-voltage systems having distributed power systems[J]. IEEE Transactions on Power Electronics, 2004, 19(5): 1333-1340.
[21] Wang Jun, Zhao Tiefu, Li Jun, et al.Characterization, modeling and application of 10 kV SiC MOSFET[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 1798-1806.
[22] 孙凯, 陆珏晶, 吴红飞, 等. 碳化硅MOSFET 的变温度参数建模[J]. 中国电机工程学报, 2013, 33(3):37-43.
Sun Kai, Lu Juejing, Wu Hongfei, et al.Modeling of SiC MOSFET with temperature dependent parameters[J].Proceedings of the CSEE, 2013, 33(3): 37-43.
[23] Leonardi C, Raciti A, Frisina F, et al.A new PSpice power MOSFET model with temperature dependent parameters: Evaluation of performances and comparison with available models[C]//The 32th Industry Applications Conference, New Orleans, USA, 1997: 1174-1181.
[24] Arribas A P, Shang Fei, Krishnamurthy Mahesh, et al.Simple and accurate circuit simulation model for SiC power MOSFETs[J]. IEEE Transactions on Electron Devices, 2015, 62(2):449-457.