Transactions of China Electrotechnical Society  2018, Vol. 33 Issue (5): 1058-1067    DOI: 10.19595/j.cnki.1000-6753.tces.170061
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Voltage Overshoot Suppression Method of SiC MOSFET-Based DC Solid-State Circuit Breaker at Turn-Off Initial Stage
LiHui, LiaoXing, linXiao, Hongwei, Yao Ran, Huang Zhangjian
State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing400044 China

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Abstract  Forthe transient overvoltage and oscillation phenomena in a solid-state DC circuit breaker based on silicon carbide metal oxide semiconductor field-effect transistor (SiC-MOSFET)caused by its high switching-off speed, a possible solution method wasproposed in this paper. First, an equivalent circuit model for SiC MOSFET was established, and the impact of different stray inductances on theturn-off initial stage voltage waveforms of theDCcircuitbreakerwas analyzed. And then, according tothe difference in energy absorbedby metal oxygen varistors(MOVs) with different rated voltage levels, a voltage overshoot suppression method was presented,in which another MOV was used as a snubber circuit. Furthermore, on the basis of its operation principle and suppressive effects, a basicprinciple was presented on how to select the snubber MOV. Finally,an experimental platform of SiC MOSFET-based DC circuit breaker was established, switching off characteristics were analyzed and compared at different stray inductances and different solid-state devices. The experimental results show thattheSiC MOSFET-based DCcircuit breaker hasrelatively serious voltage overshoot and oscillation comparedwith Si IGBT-based breaker, whichis more obvious with increasing stray inductance. And the feasibility of proposed method is also verified.
Key wordsSilicon carbide metal oxide semiconductor field-effect transistor      DC solid-state circuit breaker      snubber circuit      metal oxygen varistor     
Received: 16 January 2017      Published: 14 March 2018
PACS: TM56  
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LiHui
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Yao Ran
Huang Zhangjian
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LiHui,LiaoXing,linXiao等. Voltage Overshoot Suppression Method of SiC MOSFET-Based DC Solid-State Circuit Breaker at Turn-Off Initial Stage[J]. Transactions of China Electrotechnical Society, 2018, 33(5): 1058-1067.
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