Transactions of China Electrotechnical Society  2017, Vol. 32 Issue (增刊2): 111-118    DOI: 10.19595/j.cnki.1000-6753.tces.L70443
Orginal Article Current Issue| Next Issue| Archive| Adv Search |
The Three-Phase Solid State Transformer Topology Based on High-Voltage SiC Device and Control Strategy Under Unbalanced Grid Voltages
Yu Chenghao, Wang Yubin, Li Houzhi
College of Electrical Engineering Shandong University Jinan 250061 China

Download: PDF (3770 KB)   HTML (1 KB) 
Export: BibTeX | EndNote (RIS)      
Abstract  Solid state transformer (SST), as one of the most important equipment for smart grid application, will play a more important role in the future power system. In order to solve some issues existed in the three-phase cascaded modular SST, such as the complexity of the topology, difficulty in controlling, voltage and power unbalance of each H-bridge module,a simple three-phase SST topology based on high-voltage silicon carbide (SiC) power semiconductor device is adopted in this paper. The simple topology revitalizes the traditional topology and has a great practical prospect. Its mathematical model and normal control strategy are established and analyzed in this paper, and then a control strategy under unbalanced grid voltages by suppressing the negative-sequence currents at the grid side of SST is presented. Simulation results in PSIM software have verified the effectiveness of the two control strategies. Finally the experiment platform based on SiC devices was built, and the front-end rectifier was verified by experiment results.
Key wordsThree-phase solid state transformer      topology      high-voltage SiC devices      control strategy     
Received: 20 August 2016      Published: 14 November 2017
PACS: TM46  
Service
E-mail this article
Add to my bookshelf
Add to citation manager
E-mail Alert
RSS
Articles by authors
Yu Chenghao
Wang Yubin
Li Houzhi
Cite this article:   
Yu Chenghao,Wang Yubin,Li Houzhi. The Three-Phase Solid State Transformer Topology Based on High-Voltage SiC Device and Control Strategy Under Unbalanced Grid Voltages[J]. Transactions of China Electrotechnical Society, 2017, 32(增刊2): 111-118.
URL:  
https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L70443     OR     https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I增刊2/111
Copyright © Transactions of China Electrotechnical Society
Supported by: Beijing Magtech