计及焊层疲劳影响的风电变流器IGBT模块热分析及改进热网络模型

doi:10.19595/j.cnki.1000-6753.tces.151503

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Abstract Due to the influences of different fatigue lifetime stages on the junction temperature of the insulated gate bipolar transistor (IGBT) module in wind power converter, this paper analyzes the thermal resistance characteristics in different solder desquamating degrees, and then presents an improved thermal network model of the IGBT module. First, based on the structures and material parameters of the IGBT module of wind power converters, the coupling thermal-structure 3D finite element fatigue model of IGBT module is established. The junction temperature and thermal stress of IGBT module are investigated in different desquamating degrees of base plate solder and chip solder. Second, the thermal resistance parameters are determined in different desquamating degrees, and the improved thermal network model considering solder fatigue effects is established. Finally, the results of junction temperature calculated by the improved thermal network model are compared with those by the 3D finite element fatigue model, which testify the effectiveness of the improved thermal network model.

Key words： Wind power converter insulated gate bipolar transistor module solder desquamation junction temperature calculation

Received: 10 September 2015 Published: 19 July 2017

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TM46

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	Articles by authors
	Li Hui
	Hu Yaogang
	Liu Shengquan
	Li Yang
	Liu Zhixiang

Cite this article:

Li Hui,Hu Yaogang,Liu Shengquan等. Thermal Analysis and Improved Thermal Network Model of IGBT Module for Wind Power Converter Considering Solder Fatigue Effects[J]. Transactions of China Electrotechnical Society, 2017, 32(13): 80-87.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.151503 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I13/80

[1] Yang S, Bryant A, Mawby P, et al. An industry-based survey of reliability in power electronic converters[J]. IEEE Transactions on Industry Applications, 2011, 47(3): 1441-1451.
[2] Blaabjerg F, Liserre M, Ma K. Power electronics converters for wind turbine systems[J]. IEEE Transa- ctions on Industry Applications, 2012, 48(2): 708- 719.
[3] Yang S, Xiang D, Bryant A, et al. Condition monitoring for device reliability in power electronic converters: a review[J]. IEEE Transactions on Power Electronics, 2010, 25(11): 2734-2752.
[4] 魏克新, 杜明星. 基于集总参数法的IGBT模块温度预测模型[J]. 电工技术学报, 2011, 26(12): 79-84.
Wei Kexing, Du Mingxing, Temperature prediction model of IGBT modules based on lumped parameters method[J]. Transactions of China Electrotechnical Society, 2011, 26(12): 79-84.
[5] Nejadpak A, Mirafzal B, Mohammed O, et al. Effects of different switching algorithms on the thermal behavior of IGBT modules under pulse-load condi- tions[C]//IEEE 36th Annual Conference on Industrial Electronics Society, Glendale, 2010: 451-456.
[6] Poller T, D'Arco S, Hernes M, et al. Influence of thermal cross-couplings on power cycling lifetime of IGBT power modules[C]//7th International Con- ference on Integrated Power Electronics Systems, Nuernberg, 2012: 1-6.
[7] Xiang D, Ran L, Tavner P J, et al. Monitoring solder fatigue in a power module using case-above-ambient temperature rise[J]. IEEE Transactions on Industry Applications, 2011, 47(6): 2578-2591.
[8] Tian B, Wang Z, Qiao W. Study on case temperature distribution for condition monitoring of multidie IGBT modules[C]//29th Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Texas, 2014: 2564-2568.
[9] Tian B, Qiao W, Wang Z, et al. Monitoring IGBT's health condition via junction temperature variations[C]// 29th Annual IEEE Applied Power Electronics Con- ference and Exposition (APEC), Texas, 2014: 2550- 2555.
[10] Wang Z, Qiao W, Tian B, et al. An effective heat propagation path-based online adaptive thermal model for IGBT modules[C]//29th Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Texas, 2014: 513-518.
[11] Wintrich A, Nicolai U, Tursky W, et al. Application manual power semiconductors[M]. Nuremburg: Semikron Application Manual, 2011.
[12] 毛鹏, 谢少军, 许泽刚. IGBT模块的开关暂态模型及损耗分析[J]. 中国电机工程学报, 2010, 30(15): 40-47.
Mao Peng, Xie Shaojun, Xu Zegang. Switching transients model and loss analysis of IGBT module[J]. Proceedings of the CSEE, 2010, 30(15): 40-47.
[13] Ji B, Song X, Cao W, et al. In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives[J]. IEEE Transactions on Power Electronics, 2015, 30(3): 1535-1543.