高压P-i-N二极管关断瞬态综合失效机理分析

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Abstract In this paper, the turn-off transient failure of commercial high voltage multi-chip P-i-N diode under the rated parameters in clamped circuit is discussed from the circuit layout aspect and semiconductor mechanism aspect. Firstly, through the failure chips and failure waveforms, it is proved that the riskiest chip instead of the modules determines the reliability of power converter system. Besides, according to the filament current phenomenon of P-i-N diode under the deepest dynamic avalanche, the impact of local over temperature induced by the unbalanced current distribution is discussed. It is concluded that the failure mechanism of P-i-N is the positive feedback of thermoelectric coupling mechanism. Finally, based on the failure results and test conditions, the comprehensive failure mechanisms of power device are proposed. It is shown that the failure mechanisms are not induced by one single factor but the combined effects of all related factors.

Key words： High power modules non-uniform current distribution transient hot runaway avalanche comprehensive failure mechanism

Received: 19 September 2015 Published: 01 November 2016

PACS:

TN312+.4

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	Luo Haoze
	Li Wuhua
	He Xiangning

Cite this article:

Luo Haoze,Li Wuhua,He Xiangning. Comprehensive Failure Mechanisms in High Voltage P-i-N Diode During Turn-off Transient[J]. Transactions of China Electrotechnical Society, 2016, 31(20): 161-169.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2016/V31/I20/161

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