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| A High Temperature Gate Drive Circuit for SiC MOSFET |
| Qi Feng1, Xu Longya1, Wang Jiangbo2, Zhao Bo2, Zhou Zhe2 |
1.The Ohio State University Columbus 43210 United States
2.Smart Grid Research Institute of State Grid Beijing 102200 China |
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Abstract The outstanding semiconductor properties of SiC material,e.g.wide bandgap,high critical electric field,high saturation velocity,and thermal conductivity,promise the SiC device a new generation power electronics element with higher speed,higher voltage and,higher temperature operation potential than the silicon device.To fulfill the high temperature operation requirements from SiC device,the gate drive circuit should be designed with high temperature operation capability.This paper reviews contemporary high temperature gate drive design approaches and proposes a high temperature gate drive circuit based on transformer isolation and commercially available silicon discrete components.Performance of the designed circuit is evaluated by both computer simulations and high temperature experimental tests.
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Received: 06 January 2015
Published: 18 December 2015
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2015, Vol. 30 
