Transactions of China Electrotechnical Society  2015, Vol. 30 Issue (23): 24-31    DOI:
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A High Temperature Gate Drive Circuit for SiC MOSFET
Qi Feng1, Xu Longya1, Wang Jiangbo2, Zhao Bo2, Zhou Zhe2
1.The Ohio State University Columbus 43210 United States
2.Smart Grid Research Institute of State Grid Beijing 102200 China

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Abstract  The outstanding semiconductor properties of SiC material,e.g.wide bandgap,high critical electric field,high saturation velocity,and thermal conductivity,promise the SiC device a new generation power electronics element with higher speed,higher voltage and,higher temperature operation potential than the silicon device.To fulfill the high temperature operation requirements from SiC device,the gate drive circuit should be designed with high temperature operation capability.This paper reviews contemporary high temperature gate drive design approaches and proposes a high temperature gate drive circuit based on transformer isolation and commercially available silicon discrete components.Performance of the designed circuit is evaluated by both computer simulations and high temperature experimental tests.
Key wordsGate drive circuit      high temperature components      circuit simulation      high temperature operation performance     
Received: 06 January 2015      Published: 18 December 2015
PACS: TM46  
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Qi Feng,Xu Longya,Wang Jiangbo等. A High Temperature Gate Drive Circuit for SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2015, 30(23): 24-31.
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