双基区结构快速软恢复二极管特性研究

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Abstract In order to study the improvement of the double-base region structure with buffer layer on the power diode’s reverse recovery characteristics, the influences of the buffer layer thickness and the surface concentration on the diode reverse recovery time, softness factor, and forward voltage drop are quantitatively discussed. The double-base region structure model satisfying the necessary conditions is established. The model simulation results show that the softness factor and the reverse recovery time can both be increased through decreasing the thickness or adding the surface concentration of the buffer layer, which is caused by the influence of the concentration gradient of the buffer layer. According to the project requirements, the reverse recovery time (t_rr) is less than 250ns, the reverse blocking voltage (V_B) is greater than 1 000V and the forward voltage drop (V_F) is less than 1V. The optimum buffer layer thickness and surface concentration level are 70μm and 1×10¹⁷cm^-3, respectively. The soft recovery characteristics of the diode with the double-base region structure are demonstrated by prototyping and feature detection experiments.

Key words： Double-base region structure buffer layer soft recovery diode

Received: 28 June 2013 Published: 20 October 2015

PACS:

TN312

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	Wang Jian
	Liang Lin
	Li Youkang
	Li Xiaoming
	Yu Yuehui

Cite this article:

Wang Jian,Liang Lin,Li Youkang等. Investigation of the Characteristics of Fast Soft Recovery Diode with Double-Base Region Structure[J]. Transactions of China Electrotechnical Society, 2015, 30(18): 1-7.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2015/V30/I18/1

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