|
|
Miniaturization of Thyristor Applied in Pulse Power Supply |
Dai Ling1, Dong Hanbin1, Lin Fuchang1, Zhu haifeng2, 3, Zhang Qin1 |
1. State Key Laboratory of Advanced Electromagnetic Engineering and Technology Huazhong University of Science Technology Wuhan 430074 China 2. Southwest Jiao Tong University School of Electrical Engineering Chengdu 610031 China 3. Beijing Electric Power Company Tongzhou Power Supply Company Beijing 101100 China |
|
|
Abstract Miniaturization and lightening of pulse power supply (PPS) is a key technique in electromagnetic launch. Semiconductor switch module in PPS takes up a large volume. To obtain a compact and small semiconductor module, a method to miniaturize the module by reduce the thickness of copper substrate of thyristor is proposed. And its thermal model is established to analyze its instaneoμs temperature field. Based on the simulation results, it is found that the copper substrate thickness of thyristor does not affect the peak junction temperature, but affects the final time to cool slightly. According to the theory basis, a prototype of thinner thyristor is produced. It is proved that the thinner thyristor has the similar current capacity and d#em/em#/dt capacity with conventional type.
|
Received: 07 June 2011
Published: 20 March 2014
|
|
|
|
|
[1] 李正瀛. 脉冲功率技术[M]. 1版. 北京: 水利电力出版社, 1992. [2] 曾正中. 实用脉冲功率技术[M]. 西安: 陕西科学技术出版社, 2003. [3] 林福昌, 蔡礼, 李黎, 等. 石墨型气体开关电接触面的温升分析[J]. 中国电机工程学报, 2010, 30(33): 96-102. Lin Fuchang, Cai Li, Li Li, et al. Temperature rise analysis on electrical contact interface of graphite spark gap switch[J]. Proceedings of CSEE, 2010, 30(33): 96-102. [4] 韩永霞, 林福昌, 戴玲, 等. 紧凑型脉冲电流源的研究[J]. 高电压技术, 2008, 34(2): 389-392. Han Yongxia, Lin Fuchang, Dai Ling, et al. Study on compact pulse power system[J]. High Voltage Engineering, 2008, 34(2): 389-392. [5] Lehmann P. Overview of the electric launch activities at the french german research institute of saintlouis[J]. IEEE Transactions on Magnetics, 2003, 39(1): 24-28. [6] Spahn E, Zorngiebel V, Sterzelmeier K, et al. 50 kJ ultracompact pulsed power supply unit for varioμs applications[C]. European Conference on Power Electronics and Applications, Germany, 2005. [7] Hammon H G, Bhasavanich D, Warren F T. Design approaches to pulsed power drivers for electromagnetic and electrothermal gun systems[C]. 8th Pulsed Power Conference, San Diego, 1991. [8] Spahn E, Sterzelmeier, Gauthier K, et al. 50 kJ ultra-compact pulsed-power supply unit for activeprotection launcher systems[C]. 14th Symposium on Electromagnetic Launch Technology, Victoria, 2008. [9] Spahn E, Buderer G, Brommer V, et al. Novel 13.5 kV multichip thyristor with an enhanced di/dt for varioms pulsed power applications[C]. 2005 IEEE Pulsed Power Conference, Monterey, 2005. [10] Hoffman M G. Characterization of 125mm pulsed power thyristors[D]. Texas Tech University, 2003. [11] Pappas J A, Piccone D E. Power converters for railguns[J]. IEEE Transactions on Magnetics, 2001, 37(1): 378-386. [12] 维捷斯拉夫·本达, 约翰·戈沃, 邓肯 A·格兰特. 功率半导体器件——理论及应用[M]. 北京: 化学工业出版社, 2005. [13] 聂代祚. 电力半导体器件[M]. 北京: 电子工业出版社, 1994. [14] 李皎明, 余岳辉, 白铁城, 等. 晶闸管的瞬态热阻抗及其结温温升的研究[J]. 半导体情报, 2001, 38(2): 52-55. Li Jiaoming, Yu Yuehui, Bai Teicheng, et al. Research of thyristor s transient thermal impedance and junction temperature rise[J]. Semiconductor Information, 2001, 38(2): 52-55. [15] 蓝元良, 汤广福, 印永华, 等. 大功率晶闸管热阻抗分析方法的研究[J]. 中国电机工程学报, 2007, 27(19): 1-6. Lan Yanliang, Tang Guangfu, Yin yonghua, et al. Study on the analysis methods of thyristor thermal Model[J]. Proceedings of CSEE, 2007, 27(19): 1-6. [16] 纽春萍, 陈德桂, 刘颖异, 等. 交流接触器温度场仿真及影响因素的分析[J]. 电工技术学报, 2007, 22(5): 71-77. Niu Chunping, Chen Degui, Liu Yinyi, et al. Temperature field simulation of AC contactor and analysis of its influence factors[J]. Transactions of China Electrotechnical Society, 2007, 22(5): 71-77. [17] Somos I L, Piccone D E, Willinger L J, et al. Power semiconductors a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents[J]. IEEE Transactions on Industry Applications, 31(6): 1221-1226. [18] Profumo F. Instantaneous junction temperature evaluation of high-power diodes (thyristors) during current transients[J]. IEEE Transactions on Power Electronics, 1999, 14(2): 292-299. [19] John W, Motto Jr, William H Karstaedt, et al. Thyristor(diode) on-state voltage the ABCD modeling parameters revisited including isothermal overload and surge current modeling[C]. 31th Institute for Advanced Studies Annual Meeting, San Diego, 1996. [20] 彭勇殿, 李世平, 黄建伟, 等. 高压直流输电系统故障电流下晶闸管的温升计算[J]. 交流技术与电力牵引, 2008(01): 20-23. Peng Yongdian, Li Shiping, Huang Jianwei, et al. Thyristors temperature rising calculation in fault current conditions for HVDC systems[J]. Converter Technology & Electric Traction, 2008(01): 20-23. |
|
|
|