宽温域下的SiC MOSFET开关暂态建模方法研究

doi:10.19595/j.cnki.1000-6753.tces.241603

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Abstract An accurate model for SiC MOSFET devices is crucial for precise circuit design and analysis. Many existing SiC MOSFET models neglect temperature effects, leadingto substantial discrepancies in voltage and current measurements across different temperatures. Although some manufacturers offer proprietary models, these are often oversimplified and may exhibit significant deviations from actual SiC MOSFET performance. To address this, this paper develops a comprehensive SiC MOSFET switching transient model covering a wide temperature range, which accurately describes the transient process of SiC MOSFET switching at different temperatures. Additionally, for some complex processes, mathematical fitting of waveforms is employed to simplify the modeling process.
During the switching process of SiC MOSFETs, internal device parameters fluctuate with temperature, directly impacting transient behavior. Accurately characterizing these parameters at various temperatures is crucial for effective device modeling. The parasitic capacitance of SiC MOSFETs is analyzed in this paper, and a target function for parasitic capacitance is derived using mathematical techniques. To mitigate significant deviations in transfer characteristics at different temperatures, the traditional transfer characteristics curve fitting function is enhanced by incorporating a temperature variable through polynomial fitting. The transconductance is the slope of the tangent line of the transfer characteristic curve. In this article, the transconductance is calculated based on the transfer characteristic curve, which also obtains the relationship between transconductance and temperature. Meanwhile, the threshold voltage of SiC MOSFET is affected by temperature, and the relationship between threshold voltage and temperature also affects the transient process of the switch. This article uses linear fitting to represent the expression between temperature and threshold voltage based on the information provided in the data sheet.
These model parameters are incorporated into the SiC MOSFET switching transient model, integrating temperature effects into the SiC model. The switching process is divided into multiple stages for piecewise modeling, based on the equivalent circuit and physical mechanisms of the transient process. Analysis focuses on drain-source voltage, drain-source current, and switching time, with corresponding expressions established. Behavioral modeling is used for complex stages of switch transients, simplifying the process of switch transient modeling. At the same time, the model parameters are related to the real circuit, ensuring accuracy. This method can balance computational efficiency and accuracy. Build a dual pulse testing platform to conduct dual pulse experiments on Infineon's silicon carbide device IMZA120R040M1H at different temperatures (25℃ to 125℃). The comparison between model predictions and experimental results shows good consistency, verifying the accuracy of the model.
In summary, the following conclusions are drawn: (1) The enhanced transfer characteristics fitting method, incorporating temperature effects, achieves a fitting goodness of 0.99, improving curve accuracy. (2) The proposed SiC MOSFET switching transient model exhibits an average error of less than 10% in switching time and approximately 12% in switching loss compared to experimental data. (3) The improved model, accounting for temperature effects, enhances both the accuracy and applicability of the SiC MOSFET model.

Key words： SiC MOSFET switching transient model temperature equivalent circuit

Received: 08 December 2019

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TN386

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	Articles by authors
	Jiang Jiejun
	Liu Qing
	Han Weijian
	Xin Zhen

Cite this article:

Jiang Jiejun,Liu Qing,Han Weijian等. Research on Switching Transient Modeling Method of SiC MOSFET in Wide Temperature Range[J]. Transactions of China Electrotechnical Society, 2025, 40(20): 6591-6603.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.241603 OR https://dgjsxb.ces-transaction.com/EN/Y2025/V40/I20/6591

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