|
|
|
| A Review of Short-Circuit Failure Mechanism and Protection Technology of High-Voltage and High-Power IGBT Device |
| Feng Ganyu1, Li Xuebao1, Tao Chen1, Sun Peng1, Zhao Zhibin1, Chen Bing2,3 |
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China;
2. State Grid Jiangsu Electric Power Co. Ltd Research Institute Nanjing 211100 China;
3. State Grid Jiangsu Electric Power Co. Ltd Nanjing 210024 China |
|
|
|
Abstract High-voltage, high-power insulated gate bipolar transistor (IGBT) is the core device in the flexible HVDC transmission project. During its operation, a short-circuit fault can threaten the safe and reliable operation of the converter equipment and even the transmission system. Therefore, it is of great significance to study the short-circuit failure simulation and short-circuit protection methods to improve the IGBT’s short-circuit robustness and system stability.
According to the location of the short-circuit fault and the operating state of IGBT, typical short-circuit faults can be classified into three categories. Regarding the bridge arm current’s direction and the modular multilevel converter’s submodule operating statusbefore the short circuit, the direct short-circuit faults of the submodules are classified into four categories.
To understand the short-circuit characteristics of IGBT under different types of short-circuit faults and reveal the mechanism of short-circuit failure, it is necessary to build a short-circuit experimental platform and carry out targeted short-circuit fault simulations. Therefore, short-circuit fault simulation circuits for different types of short-circuit faults are summarized and analyzed, and their operating principles are introduced in detail.
Subsequently, the short-circuit failure modes and mechanisms of IGBT are systematically sorted out from chip and package levels. The short-circuit failure modes are divided into peak current failure, gate oscillation failure, self-turn-off failure, short-circuit pulse failure, intrinsic thermal breakdown failure, short-circuit turn-off failure, and blocking thermal breakdown failure at the chip level. Packaging failures at the packaging level are bonding wire failures, solder layer failures, etc. The effects of gate voltage, ambient temperature, and parasitic inductance of short-circuit circuits on short-circuit failure are explored.
The short-circuit detection techniques for IGBT include desaturation detection, parasitic inductance detection, gate voltage detection, and gate charge detection. The technology and its application characteristics are analyzed, and the applicability and effectiveness of each detection technique in different application scenarios are discussed. Appropriate short-circuit protection turn-off technology must be adopted to reduce the stress on the device during the turn-off process. Two main stream short-circuit protection technologies, soft turn-off and active clamp, are discussed.
The research on the short-circuit failure mechanism and protection technology of IGBT is the main trend to increase the short-circuit robustness and system stability. There are still many problems. Research hotspots in the future will focus on (1) short-circuit fault simulation method for multi-scenario applications, (2) the relationship between external factors and short-circuit failure mode, (3) intelligent short-circuit detection and protection technology, (4) anti-short circuit capability improvement method.
|
|
Received: 03 July 2024
|
|
|
|
|
|
[1] 汤广福, 庞辉, 贺之渊. 先进交直流输电技术在中国的发展与应用[J]. 中国电机工程学报, 2016, 36(7): 1760-1771.
Tang Guangfu, Pang Hui, He Zhiyuan.R&D and application of advanced power transmission tech- nology in China[J]. Proceedings of the CSEE, 2016, 36(7): 1760-1771.
[2] 李晖, 刘栋, 姚丹阳. 面向碳达峰碳中和目标的我国电力系统发展研判[J]. 中国电机工程学报, 2021, 41(18): 6245-6259.
Li Hui, Liu Dong, Yao Danyang.Analysis and reflection on the development of power system towards the goal of carbon emission peak and carbon neutrality[J]. Proceedings of the CSEE, 2021, 41(18): 6245-6259.
[3] 钱照明, 张军明, 盛况. 电力电子器件及其应用的现状和发展[J]. 中国电机工程学报, 2014, 34(29): 5149-5161.
Qian Zhaoming, Zhang Junming, Sheng Kuang.Status and development of power semiconductor devices and its applications[J]. Proceedings of the CSEE, 2014, 34(29): 5149-5161.
[4] 钱照明, 张军明, 吕征宇, 等. 我国电力电子与电力传动面临的挑战与机遇[J]. 电工技术学报, 2004, 19(8): 10-22.
Qian Zhaoming, Zhang Junming, Lü Zhengyu, et al.Challenge and opportunity for power electronics and electrical drive in China[J]. Transactions of China Electrotechnical Society, 2004, 19(8): 10-22.
[5] 冯静波, 吕铮, 邓卫华, 等. 柔性直流换流阀IGBT过流失效研究[J]. 中国电力, 2021, 54(1): 70-77.
Feng Jingbo, Lü Zheng, Deng Weihua, et al.Study on the IGBT overcurrent failure of VSC-HVDC con- verter valve[J]. Electric Power, 2021, 54(1): 70-77.
[6] Trivedi M, Shenai K.Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress[J]. IEEE Transactions on Power Electronics, 1999, 14(1): 108-116.
[7] Fan Jiayu, Wang Yaohua, He Feng, et al.Com- parisons of two turn-off failures under clamped inductive load in planar FS 3.3 kV/50 A IGBT chip[J]. IEEE Transactions on Power Electronics, 2022, 37(12): 14471-14481.
[8] 王占扩, 童朝南, 黄伟超. SiC MOSFET短路特性及过流保护研究[J]. 中国电机工程学报, 2020, 40(18): 5751-5760.
Wang Zhankuo, Tong Chaonan, Huang Weichao.Research on short-circuit characteristics and over- current protection of SiC MOSFET[J]. Proceedings of the CSEE, 2020, 40(18): 5751-5760.
[9] 彭娇阳, 孙鹏, 张浩然, 等. 基于栅极泄漏电流的碳化硅MOSFET短路栅源极失效判定方法[J]. 高电压技术, 2022, 48(6): 2391-2400.
Peng Jiaoyang, Sun Peng, Zhang Haoran, et al.Determination method for short-circuit gate-source failures of silicon carbide MOSFET based on gate leakage current[J]. High Voltage Engineering, 2022, 48(6): 2391-2400.
[10] 彭娇阳. 碳化硅MOSFET短路退化与失效研究[D]. 北京: 华北电力大学, 2022.
Peng Jiaoyang.Research on short-circuit degradation and failure of silicon carbide MOSFET[D]. Beijing: North China Electric Power University, 2022.
[11] 李探, 赵成勇, 李路遥, 等. MMC-HVDC子模块故障诊断与就地保护策略[J]. 中国电机工程学报, 2014, 34(10): 1641-1649.
Li Tan, Zhao Chengyong, Li Luyao, et al.Sub-module fault diagnosis and the local protection scheme for MMC-HVDC system[J]. Proceedings of the CSEE, 2014, 34(10): 1641-1649.
[12] 罗湘, 汤广福, 查鲲鹏, 等. 电压源换流器高压直流输电换流阀的试验方法[J]. 电网技术, 2010, 34(5): 25-29.
Luo Xiang, Tang Guangfu, Zha Kunpeng, et al.Test methods of converter valves in VSC-HVDC power transmission[J]. Power System Technology, 2010, 34(5): 25-29.
[13] 孙晓云, 高鑫, 刘延华. 柔性直流输电换流器故障特性分析及诊断研究[J]. 电力系统保护与控制, 2017, 45(2): 75-84.
Sun Xiaoyun, Gao Xin, Liu Yanhua.VSC fault characteristic analysis and diagnosis research of VSC-HVDC[J]. Power System Protection and Control, 2017, 45(2): 75-84.
[14] 罗湘, 汤广福, 温家良, 等. 电压源换流器高压直流输电装置中IGBT的过电流失效机制[J]. 中国电机工程学报, 2009, 29(33): 1-7.
Luo Xiang, Tang Guangfu, Wen Jialiang, et al.Over- current failure mechanism of IGBT within voltage source converter based high voltage direct current[J]. Proceedings of the CSEE, 2009, 29(33): 1-7.
[15] 唐开毅. 中高压大功率IGBT驱动保护电路及应用研究[D]. 长沙: 湖南大学, 2014.
Tang Kaiyi.Study of high voltage high power IGBT gate drive and protection circuits[D]. Changsha: Hunan University, 2014.
[16] 祝冲冲. 大容量IGBT模块应用工况复现平台的设计与研究[D]. 杭州: 浙江大学, 2017.
Zhu Chongchong.Design and study on practical operation reappearance test bench for high-power IGBT module application[D]. Hangzhou: Zhejiang University, 2017.
[17] 骆仁松. 无刷双馈风力发电实验系统研究[D]. 南京: 东南大学, 2017.
Luo Rensong.Research on brushless doubly-fed wind power generation experimental system[D]. Nanjing: Southeast University, 2017.
[18] 田超. 智能高频大功率门极驱动技术研究[D]. 北京: 北京交通大学, 2019.
Tian Chao.Research on intelligent high frequency and high power gate driver technology[D]. Beijing: Beijing Jiaotong University, 2019.
[19] Lutz J, Basler T.Short-circuit ruggedness of high- voltage IGBTs[C]//2012 28th International Conference on Microelectronics Proceedings, Nis, Serbia, 2012: 243-250.
[20] Lutz J, Dobler R, Mari J, et al.Short circuit Ⅲ in high power IGBTs[C]//2009 13th European Conference on Power Electronics and Applications, Barcelona, Spain, 2009: 1-8.
[21] 柳舟洲, 同向前. 大功率IGBT短路保护机理的分析[J]. 电气传动, 2015, 45(3): 77-80.
Liu Zhouzhou, Tong Xiangqian.Analysis of the short circuit protection mechanism of high power IGBT device[J]. Electric Drive, 2015, 45(3): 77-80.
[22] 沈培富. 基于数字控制的大功率IGBT驱动电路研究与设计[D]. 大连: 大连交通大学, 2018.
Shen Peifu.Research and design of high-power IGBT driven circuit based on digital control[D]. Dalian: Dalian Jiaotong University, 2018.
[23] 文阳. 3MW风电变流器功率单元设计[D]. 西安: 西安工程大学, 2016.
Wen Yang.3MW wind power converter unit design[D]. Xi’an: Xi’an Polytechnic University, 2016.
[24] Letor R, Candeloro Aniceto G.Short circuit behavior of IGBTs correlated to the intrinsic device structure and on the application circuit[J]. IEEE Transactions on Industry Applications, 1995, 31(2): 234-239.
[25] 文俊. 高压大容量级联式变频器功率组件的研究与设计[D]. 成都: 电子科技大学, 2016.
Wen Jun.The research and design of the power com- ponents of high voltage and large capacity cascading inverter[D]. Chengdu: University of Electronic Science and Technology of China, 2016.
[26] 陈松柏. IGBT的工作特性及常见失效机理研究[J]. 产业科技创新, 2022, 4(2): 44-46.
[27] 王亮亮, 杨媛, 高勇, 等. 基于两级di/dt检测IGBT模块短路策略[J]. 电子技术应用, 2016, 42(6): 49-51, 58.
Wang Liangliang, Yang Yuan, Gao Yong, et al.Short-circuit strategy of IGBT module based on two levels di/dt detection[J]. Application of Electronic Technique, 2016, 42(6): 49-51, 58.
[28] 王亮亮. 大功率IPM驱动与保护电路的设计[D]. 西安: 西安工程大学, 2016.
Wang Liangliang.The design of high-power IPM driver and protection circuit[D]. Xi’an: Xi’an Polytechnic University, 2016.
[29] 刘国友, 覃荣震, 黄建伟, 等. 牵引级高压IGBT模块短路特性研究及其优化[J]. 机车电传动, 2014(1): 7-10, 15.
Liu Guoyou, Qin Rongzhen, Huang Jianwei, et al.Research and optimization of high-voltage IGBT module short circuit characteristics for traction appli- cation[J]. Electric Drive for Locomotives, 2014(1): 7-10, 15.
[30] Eckel H G, Sack L.Experimental investigation on the behaviour of IGBT at short-circuit during the on- state[C]//Proceedings of IECON'94-20th Annual Conference of IEEE Industrial Electronics, Bologna, Italy, 1994: 118-123.
[31] Ishiko M, Hotta K, Kawaji S, et al.Investigation of IGBT turn-on failure under high applied voltage operation[J]. Microelectronics Reliability, 2004, 44(9-11): 1431-1436.
[32] Mysore M L, Alaluss M, Maitra A, et al.Investigation of the short-circuit type Ⅱ safe operating area of IGBTs[C]//2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 2022: 1-10.
[33] Eckel H G, Sack L.Optimization of the short-circuit behaviour of NPT-IGBT by the gate drive[J]. EPE Journal, 1996, 6(3/4): 20-26.
[34] Liu Xing, Mysore M L, Lutz J, et al.Study on the IGBT short circuit type Ⅱ behavior considering the plasma effect[J]. IEEE Transactions on Power Electronics, 2023, 38(1): 491-499.
[35] Liu Xing, Li Xupeng, Lutz J, et al.IGBT and free- wheeling diode behavior during the short circuit type Ⅲ with varied operation conditions[C]//2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark, 2023: 1-10.
[36] 吴奕霖, 杨艺烜, 张升, 等. MMC子模块IGBT短路实验平台设计与实现[J]. 中国电机工程学报, 2023, 43(16): 6384-6394.
Wu Yilin, Yang Yixuan, Zhang Sheng, et al.Design and implementation of IGBT short-circuit experi- mental platform for MMC submodule[J]. Proceedings of the CSEE, 2023, 43(16): 6384-6394.
[37] Yang Yixuan, Wu Yilin, Li Xuebao, et al.Short- circuit behavior and voltage redistribution of IGBTs in bridge structures[J]. IEEE Transactions on Power Electronics, 2023, 38(3): 3824-3833.
[38] Otsuki M, Onozawa Y, Kanemaru H, et al.A study on the short-circuit capability of field-stop IGBTs[J]. IEEE Transactions on Electron Devices, 2003, 50(6): 1525-1531.
[39] International Electrotechnical Commission.Semi- conductor devices (part 9): discrete devices-insulated- gate bipolar transistors (IGBTs): IEC 60747-9[S]. Geneva: International Electrotechnical Commission, 2019.
[40] 徐志远. FS-IGBT短路鲁棒性研究与优化[D]. 南京: 东南大学, 2019.
Xu Zhiyuan.Research and optimization of short- circuit robustness in FS-IGBT[D]. Nanjing: Southeast University, 2019.
[41] 冯迎鸽. 4500V/900A IGBT模块驱动保护电路设计[D]. 西安: 西安理工大学, 2017.
Feng Yingge.The design of 4500V/900A IGBT module driver and protection circuit[D]. Xi’an: Xi’an Univer- sity of Technology, 2017.
[42] Xu Zhuxian, Wang F.Experimental investigation of Si IGBT short circuit capability at 200℃[C]//2012 Twenty-Seventh Annual IEEE Applied Power Elec- tronics Conference and Exposition (APEC), Orlando, FL, USA, 2012: 162-168.
[43] 田仟惠. IGBT短路机理与特性的研究[D]. 西安: 西安理工大学, 2019.
Tian Qianhui.Research on mechanism and characteri- stics of IGBT short-circuit[D]. Xi’an: Xi’an Univer- sity of Technology, 2019.
[44] Liu Xing, Kowalsky J, Lutz J.A clamping circuit for short circuit ruggedness improvement of discrete IGBT devices based on the di/dt feedback of emitter stray inductance[C]//2019 20th International Sympo- sium on Power Electronics (Ee), Novi Sad, Serbia, 2019: 1-6.
[45] 欧阳有鹏, 谢晔源, 朱铭炼, 等. 换流阀子模块IGBT短路测试系统分析与设计[J]. 电力工程技术, 2018, 37(4): 109-113.
Ouyang Youpeng, Xie Yeyuan, Zhu Minglian, et al.Analysis and design of IGBT short circuit test system for sub modular of converter valve[J]. Electric Power Engineering Technology, 2018, 37(4): 109-113.
[46] 阳同光, 沈兵. 模块化多电平换流器IGBT模块失效机理和状态监测研究综述[J]. 电力系统保护与控制, 2023, 51(4): 174-187.
Yang Tongguang, Shen Bing.Review of failure mechanism and state monitoring technology for modular multilevel converter IGBT modules[J]. Power System Protection and Control, 2023, 51(4): 174-187.
[47] 罗皓泽, 陈忠, 杨为, 等. 压接式IGBT和晶闸管器件失效模式与机理研究综述[J]. 中国电力, 2023, 56(5): 137-152.
Luo Haoze, Chen Zhong, Yang Wei, et al.Review on failure mode and mechanism of press-pack IGBT and thyristor devices[J]. Electric Power, 2023, 56(5): 137-152.
[48] 薛鹏. 高压IGBT的失效机理分析[D]. 成都: 电子科技大学, 2016.
Xue Peng.Analysis on the failure mechanism of high- voltage IGBT[D]. Chengdu: University of Electronic Science and Technology of China, 2016.
[49] 王希平, 丁祥宽, 姚芳, 等. IGBT模块失效机理及状态监测研究综述[J]. 中国电力, 2019, 52(9): 61-72.
Wang Xiping, Ding Xiangkuan, Yao Fang, et al.Review of failure mechanism and state monitoring technology for IGBT modules[J]. Electric Power, 2019, 52(9): 61-72.
[50] 付耀龙. IGBT的分析与设计[D]. 哈尔滨: 哈尔滨工业大学, 2010.
Fu Yaolong.Analysis and design of IGBT[D]. Harbin: Harbin Institute of Technology, 2010.
[51] 刘国友, 黄建伟, 覃荣震, 等. 高压大电流 (4500V/ 600A) IGBT芯片研制[J]. 电工技术学报, 2021, 36(4): 810-819.
Liu Guoyou, Huang Jianwei, Qin Rongzhen, et al.Development of large size IGBT chip with high power capacity of 4500V/600A[J]. Transactions of China Electrotechnical Society, 2021, 36(4): 810-819.
[52] 李岩松. 高压RC-IGBT器件Snapback现象与新结构研究[D]. 成都: 电子科技大学, 2022.
Li Yansong.Study on Snapback phenomenon and new structure of high-voltage RC-IGBT[D]. Chengdu: University of Electronic Science and Technology of China, 2022.
[53] 张金平, 李泽宏, 任敏, 等. 绝缘栅双极型晶体管的研究进展[J]. 中国电子科学研究院学报, 2014, 9(2): 111-119.
Zhang Jinping, Li Zehong, Ren Min, et al.Recent development of insulated gate bipolar transistor[J]. Journal of China Academy of Electronics and Infor- mation Technology, 2014, 9(2): 111-119.
[54] 祝泽鑫. SOI-LIGBT器件短路振荡特性的研究[D]. 南京: 东南大学, 2021.
Zhu Zexin.Investigation of the gate oscillation in SOI-LIGBT under short circuit[D]. Nanjing: Southeast University, 2021.
[55] Kikuchi T, Nakamura K, Takao K.Investigation of the mechanism of gate voltage oscillation in 1.2kV IGBT under short circuit condition[C]//2018 IEEE 30th International Symposium on Power Semi- conductor Devices and ICs (ISPSD), Chicago, IL, USA, 2018: 503-507.
[56] Abbate C, Busatto G, Sanseverino A, et al.Analysis of low- and high-frequency oscillations in IGBTs during turn-ON short circuit[J]. IEEE Transactions on Electron Devices, 2015, 62(9): 2952-2958.
[57] Ohi T, Iwata A, Arai K.Investigation of gate voltage oscillations in an IGBT module under short circuit conditions[C]//2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings, Cairns, QLD, Australia, 2002: 1758-1763.
[58] Böhmer J, Schumann J, Eckel H G.Negative differential miller capacitance during switching transients of IGBTs[C]//Proceedings of the 2011 14th European Conference on Power Electronics and Applications, Birmingham, UK, 2011: 1-9.
[59] Ronsisvalle C, Fischer H, Park K S, et al.High frequency capacitive behavior of field stop trench gate IGBTs operating in short circuit[C]//2013 Twenty-Eighth Annual IEEE Applied Power Elec- tronics Conference and Exposition (APEC), Long Beach, CA, USA, 2013: 183-188.
[60] Omura I, Fichtner W, Ohashi H.Oscillation effects in IGBT’s related to negative capacitance phenomena[J]. IEEE Transactions on Electron Devices, 1999, 46(1): 237-244.
[61] Omura I, Ohashi H, Fichtner W.IGBT negative gate capacitance and related instability effects[J]. IEEE Electron Device Letters, 1997, 18(12): 622-624.
[62] Basler T, Lutz J, Brückner T, et al.IGBT self-turn-off under short-circuit condition[C]//10th International Seminar on Power Semiconductors (ISPS), Prague, Czech Republic, 2010, 235-242.
[63] 陈玉香. 大容量沟槽栅-场截止型IGBT本征关断特性和短路强健性研究[D]. 杭州: 浙江大学, 2019.
Chen Yuxiang.Turn-off behavior and short-circuit ruggedness of high-power trench gate/field-stop IGBTs[D]. Hangzhou: Zhejiang University, 2019.
[64] Kopta A, Rahimo M, Schlapbach U, et al.Limitation of the short-circuit ruggedness of high-voltage IGBTs[C]//2009 21st International Symposium on Power Semiconductor Devices & IC’s, Barcelona, Spain, 2009: 33-36.
[65] Tanaka M, Nakagawa A.Simulation studies for short- circuit current crowding of MOSFET-mode IGBT[C]//2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), Waikoloa, HI, USA, 2014: 119-122.
[66] Baburske R, van Treek V, Pfirsch F, et al. Com- parison of critical current filaments in IGBT short circuit and during diode turn-off[C]//2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), Waikoloa, HI, USA, 2014: 47-50.
[67] Tanaka M, Nakagawa A.Simulation studies for avalanche induced short-circuit current crowding of MOSFET-Mode IGBT[C]//2015 IEEE 27th Inter- national Symposium on Power Semiconductor Devices & IC’s (ISPSD), Hong Kong, China, 2015: 121-124.
[68] 彭鑫. IGBT短路关断能力与关键技术研究[D]. 成都: 电子科技大学, 2019.
Peng Xin.Research of short-circuit turn-off capability and key technologies on IGBTs[D]. Chengdu: University of Electronic Science and Technology of China, 2019.
[69] 夏超, 杨猛, 陈滔, 等. 短路电流阈值对IGBT元胞热特性影响的研究[J]. 新技术新工艺, 2022(5): 39-44.
Xia Chao, Yang Meng, Chen Tao, et al.Research on influence of short-circuit current threshold value on thermal characteristics of IGBT cells[J]. New Tech- nology & New Process, 2022(5): 39-44.
[70] 王万. 基于1200V沟槽栅FS IGBT的短路鲁棒性研究及工艺优化[D]. 成都: 电子科技大学, 2022.
Wang Wan.Research on short circuit robustness and process optimization of 1200V trench gate FS IGBT[D]. Chengdu: University of Electronic Science and Technology of China, 2022.
[71] Benmansour A, Azzopardi S, Martin J C, et al.Failure mechanisms of Trench IGBT under various short- circuit conditions[C]//2007 IEEE Power Electronics Specialists Conference, Orlando, FL, USA, 2007: 1923-1929.
[72] Benmansour A, Azzopardi S, Martin J C, et al.A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simu- lation[J]. Microelectronics Reliability, 2007, 47(9/10/ 11): 1800-1805.
[73] Benmansour A, Azzopardi S, Martin J C, et al.Failure mechanism of trench IGBT under short-circuit after turn-off[J]. Microelectronics Reliability, 2006, 46(9/ 10/11): 1778-1783.
[74] 李辉, 余越, 姚然, 等. 基于多层级模拟的压接型IGBT器件短路失效机理分析[J]. 中国电机工程学报, 2023, 43(6): 2392-2404.
Li Hui, Yu Yue, Yao Ran, et al.Study on the short circuit failure mechanism of press pack IGBT device based on multi-level simulation[J]. Proceedings of the CSEE, 2023, 43(6): 2392-2404.
[75] Gunturi S, Schneider D.On the operation of a press pack IGBT module under short circuit conditions[J]. IEEE Transactions on Advanced Packaging, 2006, 29(3): 433-440.
[76] 蒋烨, 陈明庆, 李凯, 等. 基于热电模型的压接式IGBT短路特性分析[J]. 智能电网, 2017, 5(7): 702-710.
Jiang Ye, Chen Mingqing, Li Kai, et al.Short-circuit characteristic analysis of a press-pack IGBT module using an electro-thermal model[J]. Smart Grid, 2017, 5(7): 702-710.
[77] 邓吉利. 柔性直流换流阀压接式IGBT器件可靠性建模与评估[D]. 重庆: 重庆大学, 2018.
Deng Jili.Reliability modeling and assessment of press-pack IGBT devices for the flexible DC con- verter valve[D]. Chongqing: Chongqing University, 2018.
[78] 康升扬. 压接式IGBT的电热特性与失效短路分析[D]. 重庆: 重庆大学, 2018.
Kang Shengyang.Analysis of electrothermal charac- teristics and short circuit failure of pressure-pack IGBT[D]. Chongqing: Chongqing University, 2018.
[79] 遆凯旋. 压接式IGBT失效短路特性研究[D]. 北京: 华北电力大学, 2018.
Ti Kaixuan.Research on short circuit failure mode characteristics of press-pack IGBTs[D]. Beijing: North China Electric Power University, 2018.
[80] 余越. 压接型IGBT器件短路失效多层级建模及耐受能力提升研究[D]. 重庆: 重庆大学, 2022.
Yu Yue.Study on short circuit failure multi-level modeling of withstand capability improvement of press pack IGBT device[D]. Chongqing: Chongqing University, 2022.
[81] 周扬, 唐新灵, 王亮, 等. 压接型IGBT器件短路失效管壳爆炸特性及防护方法[J]. 中国电机工程学报, 2024, 44(6): 2350-2362.
Zhou Yang, Tang Xinling, Wang Liang, et al.Explosion characteristics and protection methods of the shell in press pack IGBT devices short-circuit failure[J]. Proceedings of the CSEE, 2024, 44(6): 2350-2362.
[82] 马晋, 王富珍, 王彩琳. IGBT失效机理与特征分析[J]. 电力电子技术, 2014, 48(3): 71-73, 76.
Ma Jin, Wang Fuzhen, Wang Cailin.Analysis of failure mechanism and features of IGBT[J]. Power Electronics, 2014, 48(3): 71-73, 76.
[83] Bahman A S, Iannuzzo F, Uhrenfeldt C, et al.Prediction of short-circuit-related thermal stress in aged IGBT modules[C]//2016 IEEE Energy Con- version Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016: 1-7.
[84] Abuelnaga A, Narimani M, Bahman A S.A review on IGBT module failure modes and lifetime testing[J]. IEEE Access, 2021, 9: 9643-9663.
[85] 李辉, 刘人宽, 王晓, 等. 压接型IGBT器件封装退化监测方法综述[J]. 电工技术学报, 2021, 36(12): 2505-2521.
Li Hui, Liu Renkuan, Wang Xiao, et al.Review on package degradation monitoring methods of press- pack IGBT modules[J]. Transactions of China Elec- trotechnical Society, 2021, 36(12): 2505-2521.
[86] Suzuki K, Nishi K, Kaneda M, et al.N-buffer design optimization for short circuit SOA ruggedness in 1200V class IGBT[C]//2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, USA, 2018: 128-131.
[87] Peng Xin, Li Zehong, Wu Yuzhou, et al.Analysis of novel 3300V embedded ballast resistor IGBT with robust short-circuit capability[C]//2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Qingdao, China, 2018: 1-3.
[88] Wang Xiao, Li Hui, Yao Ran, et al.Thermal contact resistance optimization of press-pack IGBT device based on liquid metal thermal interface material[J]. IEEE Transactions on Power Electronics, 2022, 37(5): 5411-5421.
[89] 马雅青, 余军, 杜月康, 等. 一款高性能的双面冷却电动汽车级IGBT模块[J]. 机车电传动, 2021(5): 87-92.
Ma Yaqing, Yu Jun, Du Yuekang, et al.A high- performance double side cooled IGBT module for EV/HEV applications[J]. Electric Drive for Loco- motives, 2021(5): 87-92.
[90] Wang Yalin, Ding Yi, Yin Yi.Reliability of wide band gap power electronic semiconductor and packaging: a review[J]. Energies, 2022, 15(18): 6670.
[91] 王彦刚, 罗海辉, 肖强. 大功率半导体模块封装进展与展望[J]. 机车电传动, 2023(5): 78-91.
Wang Yangang, Luo Haihui, Xiao Qiang.Progress and prospect of packaging of high-power semi- conductor modules[J]. Electric Drive for Locomotives, 2023(5): 78-91.
[92] 胡亮灯, 孙驰, 陈玉林, 等. 大功率IGBT的短路故障检测[J]. 电工技术学报, 2018, 33(11): 2592-2603.
Hu Liangdeng, Sun Chi, Chen Yulin, et al.Short- circuit fault detection for high-power IGBT[J]. Transactions of China Electrotechnical Society, 2018, 33(11): 2592-2603.
[93] 赵晓博, 刘立群, 翟晓宇, 等. 一种IGBT短路保护驱动电路的优化[J]. 太原科技大学学报, 2016, 37(4): 256-259.
Zhao Xiaobo, Liu Liqun, Zhai Xiaoyu, et al.Improvement of short-circuiting protective circuit and driving circuit for IGBT[J]. Journal of Taiyuan University of Science and Technology, 2016, 37(4): 256-259.
[94] 宁红英, 孙旭霞, 杨媛. 一种基于diC/dt反馈控制的大功率IGBT驱动保护方法[J]. 电工技术学报, 2015, 30(5): 33-41.
Ning Hongying, Sun Xuxia, Yang Yuan.A high- power IGBT drive protection method based on diC/dt feedback control[J]. Transactions of China Elec- trotechnical Society, 2015, 30(5): 33-41.
[95] Krone T, Xu Chengzhi, Mertens A.Fast and easily implementable detection circuits for short-circuits of power semiconductors[C]//2015 IEEE Energy Con- version Congress and Exposition (ECCE), Montreal, QC, Canada, 2015: 2715-2722.
[96] 华伟. IGBT 短路保护电路设计与研究[J]. 机车电传动, 1997(5): 15-18.
Hua Wei.The design and study of IGBT short circuiting protective circuit[J]. Electric Drive for Locomotives, 1997(5): 15-18.
[97] 胡俊达. IGBT的驱动与保护电路研究[J]. 电机电器技术, 2003(6): 37-40.
Hu Junda.The research of IGBT driving and protection circuit[J]. Electric Machine & Electric Apparatus Technologres, 2003(6): 37-40.
[98] 李振民, 刘事明, 张锐. IGBT驱动及短路保护电路研究[J]. 电测与仪表, 2002, 39(6): 48-50.
Li Zhenmin, Liu Shiming, Zhang Rui.The research of IGBT driving and short-circuit protection circuit[J]. Electrical Measurement & Instrumentation, 2002, 39(6): 48-50.
[99] Chen Min, Xu Dehong, Zhang Xingyao, et al.An improved IGBT short-circuit protection method with self-adaptive blanking circuit based on VCE measure- ment[J]. IEEE Transactions on Power Electronics, 2018, 33(7): 6126-6136.
[100] 许路. 中高压大功率IGBT驱动技术研究[D]. 合肥: 合肥工业大学, 2019.
Xu Lu.Research on high-power IGBT drive tech- nology for medium and high voltage[D]. Hefei: Hefei University of Technology, 2019.
[101] 宁波. 大功率IGBT门极调制驱动及故障保护的研究[D]. 徐州: 中国矿业大学, 2020.
Ning Bo.Research on high power IGBT gate modulation drive and fault protection[D]. Xuzhou: China University of Mining and Technology, 2020.
[102] Wang Zhiqiang, Shi Xiaojie, Tolbert L M, et al.A di/dt feedback-based active gate driver for smart switching and fast overcurrent protection of IGBT modules[J]. IEEE Transactions on Power Electronics, 2014, 29(7): 3720-3732.
[103] Yuasa K, Nakamichi S, Omura I.Ultra high speed short circuit protection for IGBT with gate charge sensing[C]//2010 22nd International Symposium on Power Semiconductor Devices & IC’s (ISPSD), Hiroshima, Japan, 2010: 37-40.
[104] Lutz J, Schlangenotto H, Scheuermann U, et al.Semiconductor Power Devices: Physics, Character- istics, Reliability[M]. Cham, Switzerland: Springer, 2018.
[105] Li Xinchang, Xu Dawei, Zhu Hongyue, et al.Indirect IGBT over-current detection technique via gate voltage monitoring and analysis[J]. IEEE Transa- ctions on Power Electronics, 2019, 34(4): 3615-3622.
[106] 吴海富, 张建忠, 赵进, 等. SiC MOSFET短路检测与保护研究综述[J]. 电工技术学报, 2019, 34(21): 4519-4528.
Wu Haifu, Zhang Jianzhong, Zhao Jin, et al.Review of short-circuit detection and protection of silicon carbide MOSFETs[J]. Transactions of China Elec- trotechnical Society, 2019, 34(21): 4519-4528.
[107] (德)安德列亚斯·福尔克(Andreas Volke), (德)麦克尔·郝康普(Michael Hornkamp). IGBT模块: 技术、驱动和应用[M]. 韩金刚, 译. 北京: 机械工业出版社, 2016.
[108] Ratanpuri G, Shahane R, Shukla A.Current source gate driver integrated with short circuit protection and soft turn-off scheme[C]//2023 IEEE Energy Con- version Congress and Exposition (ECCE), Nashville, TN, USA, 2023: 5988-5995.
[109] Du H, Bayarsaikhan Y, Omura I.Short-circuit protection scheme with efficient soft turn-off for power modules[J]. Microelectronics Reliability, 2023, 150: 115078.
[110] 姚文海, 程善美, 孙得金. 大功率IGBT模块软关断短路保护策略[J]. 电气传动, 2014, 44(9): 77-80.
Yao Wenhai, Cheng Shanmei, Sun Dejin.Soft turn- off short-circuit protection strategy applied to high power IGBT module[J]. Electric Drive, 2014, 44(9): 77-80.
[111] 朱世蔚, 冯全源. 带软关断和欠压保护的IGBT去饱和过流检测电路[J]. 微电子学, 2021, 51(5): 632-635.
Zhu Shiwei, Feng Quanyuan.An IGBT desaturation and over-current detection circuit with soft turn-off and under-voltage protection[J]. Microelectronics, 2021, 51(5): 632-635.
[112] 梅军, 郑建勇, 胡敏强, 等. 基于IGBT软关断的混合式限流断路器结构与分析[J]. 电力系统自动化, 2004, 28(18): 59-62, 75.
Mei Jun, Zheng Jianyong, Hu Minqiang, et al.Structure and analysis of a hybrid current limiting circuit breaker based on IGBT soft switching[J]. Automation of Electric Power Systems, 2004, 28(18): 59-62, 75.
[113] 雷明, 程善美, 于孟春, 等. 基于变门极电阻的IGBT软关断实现[J]. 电力电子技术, 2012, 46(12): 46-48.
Lei Ming, Cheng Shanmei, Yu Mengchun, et al.Soft shut down of IGBT based on variable gate resi- stances[J]. Power Electronics, 2012, 46(12): 46-48.
[114] 马继晶, 吴有智, 蒋小龙, 等. 一种数字式IGBT软关断策略的研究[J]. 工业控制计算机, 2022, 35(6): 159-160.
Ma Jijing, Wu Jiang Xiaolong, et al.Research on a digital IGBT soft-switching strategy[J]. Industrial Control Computer, 2022, 35(6): 159-160.
[115] 邹铭锐, 曾正, 孙鹏, 等. 基于变电阻驱动的SiC器件开关轨迹协同调控[J]. 电工技术学报, 2023, 38(16): 4286-4300.
Zou Mingrui, Zeng Zheng, Sun Peng, et al.Coor- dinated switching trajectory regulation of SiC device using variable resistance gate driver[J]. Transactions of China Electrotechnical Society, 2023, 38(16): 4286-4300.
[116] 李锦, 党恩帅, 范雨顺, 等. 一种碳化硅与硅器件混合型三电平有源中点钳位零电压转换软开关变流器[J]. 电工技术学报, 2024, 39(8): 2496-2510.
Li Jin, Dang Enshuai, Fan Yushun, et al.A hybrid three-level active-neutral-point-clamped zero-voltage transition soft-switching converter with silicon carbide and silicon devices[J]. Transactions of China Electrotechnical Society, 2024, 39(8): 2496-2510.
[117] 黄先进, 蒋晓春, 叶斌, 等. 智能化IGBT驱动电路研究[J]. 电工技术学报, 2005, 20(4): 89-93.
Huang Xianjin, Jiang Xiaochun, Ye Bin, et al.Research on intelligent IGBT drive circuit[J]. Transactions of China Electrotechnical Society, 2005, 20(4): 89-93.
[118] 丁浩华, 陈辉明. 带过流和短路保护的IGBT驱动电路研究[J]. 电力电子技术, 1997, 31(1): 30-32.
Ding Haohua, Chen Huiming.IGBT driving and fault current limiting circuit[J]. Power Electronics, 1997, 31(1): 30-32.
[119] 张午宇, 齐磊, 张翔宇, 等. 计及金属化薄膜电容器与IGBT模块退化过程相关性的柔直换流阀组件可靠性评估方法[J]. 电工技术学报, 2024, 39(14): 4508-4518.
Zhang Wuyu, Qi Lei, Zhang Xiangyu, et al.Reliability evaluation method for VSC-HVDC valve submodules considering the correlation between the degradation process of metallized polypropylene film capacitors and IGBT modules[J]. Transactions of China Electrotechnical Society, 2024, 39(14): 4508-4518.
[120] 王加龙, 乐波, 杨勇, 等. 柔直工程用IGBT器件可靠性试验研究及应用[J]. 电力电子技术, 2022, 56(8): 132-136, 140.
Wang Jialong, Yue Bo, Yang Yong, et al.Reliability test research and engineering application of IGBT modules for VSC-HVDC[J]. Power Electronics, 2022, 56(8): 132-136, 140.
[121] 彭程, 李学宝, 范迦羽, 等. 压接型IGBT器件内部杂散电感差异对瞬态电流分布影响规律研究[J]. 电工技术学报, 2023, 38(11): 2850-2860.
Peng Cheng, Li Xuebao, Fan Jiayu, et al.Effect of stray inductance difference on transient current dis- tribution in press-pack IGBT devices[J]. Transactions of China Electrotechnical Society, 2023, 38(11): 2850-2860.
[122] 李鹏坤, 王跃, 吕高泰, 等. 柔直换流阀可靠性研究及提升指标分析[J]. 电力电子技术, 2021, 55(12): 55-59, 68.
Li Pengkun, Wang Yue, Lü Gaotai, et al.Reliability research and improvement index analysis of converter valve[J]. Power Electronics, 2021, 55(12): 55-59, 68.
[123] 李杭泽, 戴志辉, 石旭, 等. 计及控制响应的多端混合直流输电系统短路电流近似计算方法[J]. 电工技术学报, 2024, 39(9): 2810-2824.
Li Hangze, Dai Zhihui, Shi Xu, et al.Approximate calculation method of short-circuit current of multi- terminal hybrid DC transmission system considering control strategy[J]. Transactions of China Electro- technical Society, 2024, 39(9): 2810-2824.
[124] 刘泽洪, 郭贤珊. 高压大容量柔性直流换流阀可靠性提升关键技术研究与工程应用[J]. 电网技术
2020, 44(9): 3604-3613.
125 Liu Zehong, Guo Xianshan.High-voltage large- capacity VSC valve reliability enhancement[J]. Power System Technology, 2020, 44(9): 3604-3613.
[125] 段军, 谢晔源, 姜田贵, 等. 模块化多电平换流阀可靠性研究与设计优化[J]. 电力工程技术, 2018, 37(2): 38-43.
Duan Jun, Xie Yeyuan, Jiang Tiangui, et al.Reliability research and design optimization of modular multilevel converter[J]. Electric Power Engineering Technology, 2018, 37(2): 38-43. |
|
|
|
2025, Vol. 40 
