基于阵列波导光栅的IGBT功率模块结温监测

doi:10.19595/j.cnki.1000-6753.tces.240255

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Abstract High-voltage, high-power insulated gate bipolar transistors (IGBTs) are the key components for power conversion in flexible DC transmission networks. High temperature is the main reason for IGBT modules’ efficacy being lost in engineering. Therefore, real-time monitoring of the internal temperature of IGBT modules is crucial. This paper proposes an IGBT temperature monitoring system based on arrayed waveguide grating (AWG) and waveguide grating (WBG) to precisely monitor the real-time temperature of IGBT modules in the converter valve.
Optical sensing technology is used to monitor the junction temperature of IGBTs by mounting sensors directly on the internal chip of IGBT modules. Thermal simulation of IGBT modules is conducted to investigate the positioning of sensors based on the temperature distribution during module operation. Then, WBG sensors are fixed on the measured chip based on the packaging method of IGBT modules. A testing platform for IGBT module operation is set up. The sensor network is simplified through wavelength division multiplexing characteristics of AWG for optical grating reflection wavelength demodulation. Using the relationship between the reflected wavelength of WBG and the surface temperature of the measured chip, the junction temperature information of the chip is derived. Finally, the accuracy of the system is verified by directly measuring the optical spectrum of the grating using a demodulator.
The temperature difference between the IGBT chip and the diode chip is about 4.3℃ when the applied voltage is 800 V under different operating conditions. Even considering the effects of water cooling fluctuations and air cooling, the highest temperature of the IGBT chip obtained by the monitoring system is very close to the simulated temperature. For every 250 V increase in operating voltage, the operating temperature of the IGBT chip and diode chip obtained by the monitoring system increases by about 2℃, which aligns with experimental expectations. The temperature data obtained by the AWG demodulation and the demodulation instrument are almost identical, with a maximum temperature fluctuation range of no more than 0.6℃, which verifies the system’s reliability.
The following conclusions can be drawn. (1) The thermal simulation data of IGBT modules accurately reflect the junction temperature information during IGBT operation. (2) WBG sensors’ fixation does not affect their measurement accuracy. The AWG wavelength demodulation method can accurately and quickly obtain wavelength data. (3) The monitoring system of the junction temperature of IGBT chips contributes to quantitative reliability evaluation and health expectancy of IGBT modules during long-term operation. The AWG wavelength demodulation significantly reduces the cost of monitoring IGBT junction temperature, making large-scale sensor employment in flexible DC converters possible.

Key words： IGBT module junction temperature monitoring waveguide bragg grating (WBG) arrayed waveguide grating (AWG)

Received: 17 February 2024

PACS:	TM751.1
	TN322.8

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	Articles by authors
	Gao Liyu
	Luan Hongzhou
	Li Tianqi
	Huang Xinxin
	Zhang Jinlong

Cite this article:

Gao Liyu,Luan Hongzhou,Li Tianqi等. Junction Temperature Monitoring of IGBT Power Module Based on Array Waveguide Grating[J]. Transactions of China Electrotechnical Society, 2025, 40(6): 1796-1804.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.240255 OR https://dgjsxb.ces-transaction.com/EN/Y2025/V40/I6/1796

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