基于MOSFET的串联谐振双有源桥死区振荡机理分析及抑制

doi:10.19595/j.cnki.1000-6753.tces.201485

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Abstract The series resonant dual active bridge (DAB) converter based on MOSFET can realize zero voltage switching (ZVS) and zero current switching(ZCS) of all power devices at the same time. It has high efficiency and is widely used in isolated DC-DC stage of power electronics transformer (PET). However, in DAB with isolation transformer, due to the existence of parasitic capacitance of MOSFET, the parasitic capacitance and leakage inductance of isolation transformer will produce high frequency oscillation in the dead time, which will increase the conduction loss. In this paper, the equivalent circuit of series resonant DAB in dead time is established. The mathematical relationship between the amplitude of high frequency oscillation current and the current at turn off time is analyzed. In order to suppress high frequency oscillation, an oscillation suppression method based on switch frequency fine tuning is proposed. The experimental results show that the theoretical analysis is correct and the high frequency oscillation suppression method is effective.

Key words： Series resonant dual active bridge parasitic capacitance of MOSFET excitation current dead-time high-frequency oscillation high-frequency oscillation suppression

Received: 06 November 2020

PACS:	TM41
	TM46

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	Hu Yujie
	Li Zixin
	Zhao Cong
	Luo Long
	Li Yaohua

Cite this article:

Hu Yujie,Li Zixin,Zhao Cong等. Mechanism Analysis and Suppression of Oscillation in Dead Time of Series Resonant Dual Active Bridge Based on MOSFET[J]. Transactions of China Electrotechnical Society, 2022, 37(10): 2549-2558.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.201485 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I10/2549

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