电压探头对宽禁带器件高频暂态电压精确测量的影响

doi:10.19595/j.cnki.1000-6753.tces.191736

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Abstract

With the development of wide-bandgap semiconductor devices, the switching speed of power electronic devices is getting faster, and the operating voltage is increasing, which makes the performance of voltage probes have increasing impacts on the measured transient voltages of power electronic devices. This paper analyzed the measuring principles of several commonly used oscilloscope voltage probes in the laboratory. Their circuit models were built. The impacts from the key factors of the probe, such as the bandwidth/rise time, parasitic inductance and common mode rejection ratio, on measured high-frequency transient voltages were studied. Finally, an experimental platform was built, and the results verified the proposed theoretical analysis.

Key words： Voltage probe accurate measurement transient voltage wide-bandgap devices

Received: 12 December 2019

PACS:

TM930.1

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	Articles by authors
	He Jie
	Liu Yushan
	Bi Daqiang
	Li Xiao

Cite this article:

He Jie,Liu Yushan,Bi Daqiang等. Impacts of Voltage Probes for Accurate Measurement of High-Frequency Transient Voltage of Wide-Bandgap Devices[J]. Transactions of China Electrotechnical Society, 2021, 36(2): 362-372.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.191736 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I2/362

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