| [1] Millán J, Godignon P, Perpiñà X, et al.A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163.
[2] 盛况, 郭清, 张军明, 等. 碳化硅电力电子器件在电力系统的应用展望[J]. 中国电机工程学报, 2012, 32(30): 1-7.
Sheng Kuang, Guo Qing, Zhang Junming, et al.Development and prospect of SiC power devices in power grid[J]. Proceedings of the CSEE, 2012, 32(30): 1-7.
[3] Zhang Zheyu, Wang F, Tolbert L M, et al.Active gate driver for crosstalk suppression of SiC devices in a phase-leg configuration[J]. IEEE Transactions on Power Electronics, 2014, 29(4): 1986-1997.
[4] 巴腾飞, 李艳, 梁美. 寄生参数对SiC MOSFET栅源极电压影响的研究[J]. 电工技术学报, 2016, 31(13): 64-73.
Ba Tengfei, Li Yan, Liang Mei.The effect of parasitic parameters on gate-source voltage of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2016, 31(13): 64-73.
[5] 王旭东, 朱义诚, 赵争鸣, 等. 驱动回路参数对碳化硅MOSFET开关瞬态过程的影响[J]. 电工技术学报, 2017, 32(13): 23-30.
Wang Xudong, Zhu Yicheng, Zhao Zhengming, et al.Impact of gate-loop parameters on the switching behavior of SiC MOSFETs[J]. Transactions of China Electrotechnical Society, 2017, 32(13): 23-30.
[6] Hazra S, De A, Lin Cheng, et al.High switching performance of 1700V, 50A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications[J]. IEEE Transactions on Power Electronics, 2016, 31(7): 4742-4754.
[7] Chen Cai, Chen Yu, Li Yuxiong, et al.An SiC-based half-bridge module with an improved hybrid pack- aging method for high power density applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11): 8980-8991.
[8] 谢宗奎, 柯俊吉, 赵志斌, 等. 碳化硅MOSFET换流回路杂散电感提取方法的优化[J]. 电工技术学报, 2018, 33(21): 4919-4927.
Xie Zongkui, Ke Junji, Zhao Zhibin, et al.Optimized extraction method of stray inductance in com- mutation path for silicon carbide MOSFET[J]. Transactions of China Electrotechnical Society, 2018, 33(21): 4919-4927.
[9] 梁美, 李艳, 郑琼林, 等. 高速SiC MOSFET开关特性的测试方法[J]. 电工技术学报, 2017, 32(14): 87-95.
Liang Mei, Li Yan, Zheng Qionglin, et al.Test method for switching performance of high speed SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2017, 32(14): 87-95.
[10] ABCs of probes primer[Z/OL].2019, https://www.tek. com.
[11] 8 hints for better scope probings-application note[Z/OL].2017. https://www.keysight.com.
[12] 陈晓华. 示波器探头的使用及测量结果的误差分析[J]. 半导体技术, 2010, 35(7): 634-636.
Chen Xiaohua.Use of oscilloscope probe and error analysis of measurement results[J]. Semiconductor Technology, 2010, 35(7): 634-636.
[13] Funaki T, Hayashi K.Estimation of residual common mode voltage in floating voltage measurement with differential voltage probe for high voltage power electroincs circuit[C]//2018 IEEE CPMT Symposium Japan (ICSJ), Kyoto, 2018: 91-94.
[14] Grubmüller M, Schweighofer B, Wegleiter H.Development of a differential voltage probe for measurements in automotive electric drives[J]. IEEE Transactions on Industrial Electronics, 2017, 64(3): 2335-2343.
[15] Van den Bossche A, Bozalakov D. Two channel high voltage differential probe for power electronics applications[C]//2013 15th European Conference on Power Electronics and Applications (EPE), Lille, 2013: 1-6.
[16] Grubmüller M, Schweighofer B, Wegleiter H.A digital isolated high voltage probe for measurements in power electronics[C]//2018 IEEE 27th Inter- national Symposium on Industrial Electronics (ISIE), Cairns, QLD, 2018: 791-796.
[17] Ford D.The secret world of oscilloscope probes[J]. Silicon Chip, 2009, 22(10): 16-23.
[18] Zhong Bing.Lossy transmission line modeling and simulation using special functions[D]. Tucson: University of Arizona, 2006.
[19] McAbel W E. Probe measurements[M]. Beaverton, Oregon: Tektronix, 1969: 8-13.
[20] Caloz C, Itoh T.Electromagnetic metamaterials: transmission line theory and microwave applica- tions[M]. New Jersey, Hoboken: John Wiley & Sons, 2006.
[21] Introduction to oscilloscope probes: lab experiment[Z/OL].2009. https://www.physics.wisc.edu.
[22] Art Pini. Understanding, selecting,effectively using active oscilloscope probes[Z/OL].2017. https:// www.digikey.sg.
[23] 黄晓宗, 黄文刚, 刘伦才, 等. 运算放大器共模抑制比的仿真与测试[J]. 微电子学, 2012, 42(2): 154-158.
Huang Xiaozong, Huang Wengang, Liu Luncai, et al.Simulation and test of common mode rejection ratio of operational amplifier[J]. Microelectronics, 2012, 42(2): 154-158.
[24] IsoVu technology white paper[Z/OL].2019. https:// www.tek.com.
[25] Elmore W C.The transient response of damped linear networks with particular regard to wideband amplifiers[J]. Journal of Applied Physics, 1948, 19(1): 55-63.
[26] Brown G D.Bandwidth and rise time calculations for digital multimode fiber-optic data links[J]. Journal of Lightwave Technology, 1992, 10(5): 672-678.
[27] Pettit J M, McWhorter M M. Electronic amplifier circuits[M]. New York: McGraw-Hill, 1961.
[28] Johnson H W, Graham M.High-speed digital design: a handbook of black magic[M]. Upper Saddle River, NJ: Prentice Hall, 1993.
[29] N2790A 100MHz, N2791A 25MHz and N2891A 70MHz high-voltage differential probes-data sheet[Z/OL].2017. https://www.keysight.com. |
2021, Vol. 36 
