Numerical Modeling and Analysis of Electromagnetic Interference in Power Electronics Systems
Jia Shengyu, Zhao Zhengming, Shi Bochen, Zhu Yicheng
State Key Laboratory of Control and Simulation of Power Systems and Generation Equipments Department of Electrical Engineering Tsinghua University Beijing 100084 China
Abstract With the increase of power level and switching speed of semiconductor devices, electromagnetic interference (EMI) caused by switching process is becoming more and more serious. Different from traditional EMI problems, the EMI problem of power electronics systems which mainly caused by the transient switching process of power semiconductor device, is intrinsically about energy conversion rather than signal propagation, implemented by pulse rather than continuous wave, and essentially carried by electromagnetic radiation in space rather than voltage and current in circuit.These three characteristics determine that it is difficult to reveal the essential features and rules of EMI problem of power electronics systems by using traditionalmethod of signal propagation, sinusoidal periodic waveform analysis and equivalent circuit modeling. Based on this understanding, from the perspective of energy pulse and electromagnetic filed transient process, this paper models and analyzes the electromagnetic pulse under the coupling effect of electromagnetic field and carrier field. A three-dimensional numerical model for EMI mechanism research is built, and the distribution and variation of electromagnetic field both in power device and space during the nanosecond switching transients are computed. The correctness of this numerical model is verified both in numerical calculation's and principle's aspect. This work will provide an effective numerical analysis basis for EMI mechanism research of power electronics systems.
Jia Shengyu,Zhao Zhengming,Shi Bochen等. Numerical Modeling and Analysis of Electromagnetic Interference in Power Electronics Systems[J]. Transactions of China Electrotechnical Society, 2021, 36(11): 2383-2393.
[1] Millan J, Godignon P, Perpina X, et al.A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163. [2] 刘佳斌, 肖曦, 梅红伟. 基于GaN-HEMT器件的双有源桥DC-DC变换器的软开关分析[J]. 电工技术学报, 2019, 34(增刊2): 534-542. Liu Jiabin, Xiao Xi, Mei Hongwei.Soft switching analysis of dual active bridge DC-DC converter based on GaN-HEMT device[J]. Transactions of China Electrotechnical Society, 2019, 34(S2): 534-542. [3] Josifovic I, Popovic-gerber J, Ferreira J A. Improving SiC JFET switching behavior under influence of circuit parasitics[J]. IEEE Transactions on Power Electronics, 2012, 27(8): 3843-3854. [4] 钱照明, 盛况. 大功率半导体器件的发展与展望[J]. 大功率变流技术, 2010(1): 1-9. Qian Zhaoming, Sheng Kuang.Development and perspective of high power semiconductor device[J]. High Power Converter Technology, 2010(1): 1-9. [5] 李建轩, 赵治华, 张向明, 等. 电磁发射系统逆变装置的高频干扰电流测量[J]. 电工技术学报, 2018, 33(24): 5805-5810. Li Jianxuan, Zhao Zhihua, Zhang Xiangming, et al.Measurement technology of high frequency interference current of the electric energy conversion device in the electromagnetic launch system[J]. Transaction of China Electrotechnical Society, 2018, 33(24): 5805-5810. [6] Zhang B, Wang S.A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 626-643. [7] 钱照明, 陈恒林. 电力电子装置电磁兼容研究最新进展[J]. 电工技术学报, 2007, 22(7): 1-11. Qian Zhaoming, Chen Henglin.State of art of electromagnetic compatibility research on power electronic equipment[J]. Transaction of China Electrotechnical Society, 2007, 22(7): 1-11. [8] Wang Kangping, Yang Xu, Wang Laili,et al.Instability analysis and oscillation suppression of enhancement-mode GaN devices in half-bridge circuits[J]. IEEE Transactions on Power Electronics, 2018, 33(2): 1585-1596. [9] Umetani K, Matsumoto R, Hiraki E.Prevention of oscillatory false triggering of GaN-FETs by balancing gate-drain capacitance and common-source inductance[J]. IEEE Transactions on Industry Applications, 2019, 55(1): 610-619. [10] Lemmon A, Mazzola M, Gafford J, et al.Instability in half-bridge circuits switched with wide band-gap transistors[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2380-2392. [11] Zhang Lei, Yuan Xibo, Wu Xiaojie,et al.Performance evaluation of high-power SiC MOSFET modules in comparison to Si IGBT modules[J]. IEEE Transactions on Power Electronics, 2019, 34(2): 1181-1196. [12] 赵争鸣, 施博辰, 朱义诚. 对电力电子学的再认识——历史、现状及发展[J]. 电工技术学报, 2017, 32(12): 5-15. Zhao Zhengming, Shi Bochen, Zhu Yicheng.Reconsideration on power electronics: the past, present and future[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 5-15. [13] Mainali K, Oruganti R.Conducted EMI mitigation techniques for switch-mode power converters: a survey[J]. IEEE Transactions on Power Electronics, 2010, 25(9): 2344-2356. [14] Zhu H B, Lai JS, Hefner A R, et al.Analysis of Conducted EMI emissions from PWM inverter based on empirical models and comparative experiments[C]//30th Annual IEEE Power Electronics Specialists Conference, Charleston, SC, USA, 1999: 861-867. [15] Wang S, Kong P, Lee Fred C.Common mode noise reduction for boost converters using general balance technique[J]. IEEE Transactions on Power Electronics, 2007, 22(4): 1410-1416. [16] Huang X D, Pepa E, Lai J-S, et al.Three-phase inverter differential mode EMI modeling and prediction in frequency domain[C]//38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, Salt Lake City, UT, 2003: 2048-2055. [17] Liu Q, Shen W, Wang F, et al.Experimental evaluation of IGBTs for characterizing and modeling conducted EMI emission in PWM inverters[C]//IEEE 34th Annual Conference on Power Electronics Specialist, Acapulco, Mexico, 2003: 1951-1956. [18] 曹勇, 杨飞, 李春晖, 等. 不同耦合系数下的交错并联电流连续模式Boost功率因数校正变换器的传导电磁干扰[J]. 电工技术学报, 2019, 34(10): 2176-2186. Cao Yong, Yang Fei, Li Chunhui, et al.Conducted electromagnetic interference of interleaved continuous current mode Boost power factor correction converter with different coupling coefficients[J].Transactions of China Electrotechnical Society, 2019, 34(10): 2176-2186. [19] 江师齐, 刘艺涛, 银杉, 等. 基于噪声源阻抗提取的单相逆变器电磁干扰滤波器的设计[J]. 电工技术学报, 2019, 34(17): 3552-3562. Jiang Shiqi, Liu Yitao, Yin Shan, et al.Electromagneticinterference filter design of single-phase inverter based on the noise source impedance extraction[J]. Transactions of China Electrotechnical Society, 2019, 34(17): 3552-3562. [20] Shen W, Wang F, Boroyevich D, et al.Optimizing EMI filter design for motor drives considering filter component high-frequency characteristics and noise source impedance[C]//Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, Anaheim, CA, USA, 2004: 669-674. [21] Poon N K, Liu J C P, Tse C K, et al. Techniques for input ripple current cancellation: classification and implementation[J]. IEEE Transactions on Power Electronics, 2000, 15(6): 1144-1152. [22] Zumel P, Garcia O, Cobos J A, et al.EMI reduction by interleaving of power converters[C]//Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, Anaheim, CA, USA, 2004: 688-694. [23] 陈强, 陈章勇, 陈勇. 基于副边谐振技术的单端反激式变换器EMI分析[J]. 电工技术学报, 2019, 34(4): 728-737. Chen Qiang, Chen Zhangyong, Chen Yong.Electromagnetic interference analysis of single-ended fly-back converter based on secondary-resonance-technology[J]. Transactions of China Electrotechnical Society, 2019, 34(4): 728-737. [24] Antonini G, Cnstina S, Orlandi A.EMC characterization of SMPS devices: Circuit adiated emissions[J]. IEEE Transactions on Electromagnetic Compatibility, 1996, 38(3): 300-309. [25] Aouine O, Labarre Cé, Costa F.Measurement and modeling of the magnetic near field radiated by a buck chopper[J]. IEEE Transactions on Electromagnetic Compatibility, 2008, 50(2): 445-449. [26] Hernando M M, Fernandez A, Arias M, et al.EMI radiated noise measurement system using the source reconstruction technique[J]. IEEE Transactions on Industrial Electronics, 2008, 55(9): 3258-3265. [27] Gao Xu, Fan Jun, Zhang Yaojiang, et al.Far-field prediction using only magnetic near-field scanning for EMI test[J]. IEEE Transactions on Electromagnetic Compatibility, 2014, 56(6): 1335-1343. [28] Chen Henglin, Wang Tao, Feng Linmin, et al.Determining far-field EMI from near-field coupling of a power converter[J]. IEEE Transactions on Power Electronics, 2014, 29(10): 5257-5264. [29] Zhang Yingjie, Wang Shuo, Chu Yongbin.Predicting far-field radiation with the emission models of power converters[C]//2017 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMCSI), Washington, DC, USA, 2017: 797-802.
2021, Vol. 36 
