Analysis for Partial Discharges Behavior in SF6 Gas Filled Void in Gas Insulated Switchgear under Oscillating Switching Impulses
Zhang Chongxing1, Ren Ming1, Zhou Jierui1, Dong Ming1, Que Bo2
1. State Key Lab of Electrical Insulation & Power Equipment Xi’an Jiaotong UniversityXi’an 710049 China; 2. State Grid Zhejiang Electric Power Corporation Hangzhou 310007 China
Abstract In this paper, the partial discharge detection circuit was built and the partial discharge behaviors in SF6 gas filled void in basin-type insulators excited by OSI (oscillating switching impulses) were experimentally explored. In order to reveal the mechanism hidden behind partial discharge under OSI, the modeling and simulation for partial discharge sequences were carried out. The results show that: the partial discharge sequences under OSI exhibit the character of stages with the increase of applied voltage; PDIE and PDEE decrease with the expansion of void; PDIE under OSI is larger than that under AC voltage with the same radius of void, but the partial discharge behaviors under OSI are more active (relatively lager number of pulses and magnitude) and show a rapidly rising trend. In addition, a partial discharge model considering charge memory effect and Monte Carlo stochastic process is established. The results of the first discharge delay and the statistical distribution of the pulses were well explained and described by simulation.
Zhang Chongxing,Ren Ming,Zhou Jierui等. Analysis for Partial Discharges Behavior in SF6 Gas Filled Void in Gas Insulated Switchgear under Oscillating Switching Impulses[J]. Transactions of China Electrotechnical Society, 2019, 34(14): 3074-3083.
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2019, Vol. 34 
