一种IGBT模块端口等效耦合热阻抗的离散化方波提取法

doi:10.19595/j.cnki.1000-6753.tces.161234

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Abstract On the background of insulategate bipolar transistor (IGBT) reliability research, this paper aims at the shortage of current thermal modelingand the extraction method of coupled thermal impedance of IGBT modules, a new discrete square wave method to extract the coupled thermal impedance between IGBT and freewheeling diode(FWD) is proposed. Based on the principle of junction temperature measurement via thermo-sensitive electrical parameters (TSEP) and the response characteristics of the thermal network, the internal thermal behavior of IGBT can be established by the measurement of the port TSEP. The IGBT module are regarded as a black box, thus the proposed extraction method can be universally applicable to a variety of internal packaging structure module. Finally, the validity and the precision ofthe proposed method is verifiedthrough experiment.

Key words： IGBT coupled thermal impedance electro-thermal parameters discrete squarewave

Received: 08 August 2016 Published: 12 April 2018

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TM464

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	CaiJie
	Zhou Luowei
	Peng Yingzhou
	Sun Pengju
	Du Xiong

Cite this article:

CaiJie,Zhou Luowei,Peng Yingzhou等. A Discrete Square Wave Extraction Method for the Port Equivalent Coupled Thermal Impedance of IGBT Modules[J]. Transactions of China Electrotechnical Society, 2018, 33(7): 1440-1449.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.161234 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I7/1440

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