低电压上升率条件下正极性不连续先导发展特性

doi:10.19595/j.cnki.1000-6753.tces.170707

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Abstract

Discontinuous leader development is the main discharge process under the application of the switching impulse voltage with the low rate of voltage rising, which is of great significance to study the external insulation characteristics of ultra high voltage (UHV) large scale air gap. Based on the CMOS high-speed camera, discharge tests with different operating impulse voltages were carried out by constructing a comprehensive observation platform of rod-plate long gap discharge, and a clear discontinuous leader development process picture was captured. Moreover, the trend of characteristic parameters was obtained, such as the leader current, injection charge and leader channel unit length charge. Further analysis based on the experimental results shows that the discontinuous leader development under the action of the impulse voltage with low rate of voltage rising has two different laws. Finally, combined with the test results, the discontinuous leader development stagnation stage of the channel temperature changes was calculated by the thermodynamic equation. The results show that the leader channel temperature is still greater than 1 500K in the hundreds of microsecond time scales of the leader stagnation stage, and the subsequent leader can continue to develop on the original leader channel.

Key words： Positive discharge long air gap discontinuous leader low rate of voltage rising switching impulse

Received: 24 July 2017 Published: 27 July 2018

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	Xie Yaoheng
	Peng Ping
	Liu Yun
	Ye Huisheng
	Duan Xinyu

Cite this article:

Xie Yaoheng,Peng Ping,Liu Yun等. The Development Characteristics of the Discontinuous Leader Under the Positive Switching Impulse with Low Rate of Voltage Rising[J]. Transactions of China Electrotechnical Society, 2018, 33(14): 3406-3414.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.170707 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I14/3406

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