一种中电压大功率IGBT模块行为模型

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Abstract The existing models of trench stop insulated gate bipolar transistor (IGBT) behavior as well as the models in simulation software are not established specially for medium-voltage high power IGBT modules. As a result, these models fail to simulate the distinguished dynamic characteristics of high power IGBT accurately. This paper introduces an equivalent capacitance caused by charge stored in base area and a parasitic inductance in IGBT bond wire to the behavior models. Furthermore, combined with the freewheeling diode behavior model and the IGBT model, the integrated behavior model is established special for medium-voltage high power IGBT modules. At the same time, a new function fitting method for miller capacitance is proposed. The relationship between the typical behavior characteristics and the model parameters in integrated IGBT hard switching transient is quantitatively analyzed. The parameter extraction is realized by a concise way. Finally, a 3.3kV/1.5kA level IGBT behavior model is realized in Pspice simulation environment. The comparisons of simulation and experiment result prove the feasibility and validity of the model.

Key words： Medium-voltage high power insulated gate bipolar transistor behavior model dynamic characteristics

Received: 02 August 2015 Published: 01 March 2017

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TM564

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	Articles by authors
	Chen Yulin
	Sun Chi
	Ai Sheng
	Hu Liangdeng

Cite this article:

Chen Yulin,Sun Chi,Ai Sheng等. The Medium-Voltage High Power IGBT Module Behavior Model[J]. Transactions of China Electrotechnical Society, 2017, 32(4): 25-34.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I4/25

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