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| A Novel Fast Collector Trench Insulated Gate Bipolar Transistor |
| Jiang Mengxuan1, Shuai Zhikang2, Shen Zheng2, Wang Jun2, Liu Daoguang3 |
1. State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China;
2. College of Electrical and Information Engineering Hunan University Changsha 410082 China;
3. Institute of Nuclear and New Energy Technology Tsinghua University Beijing 100084 China |
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Abstract This paper proposes a novel collector trench insulated gate bipolar transistor (CT-IGBT) with an electron extraction channel formed on the collector side to enhance the electron extraction effect, in which a low doped n-type layer is introduced to increase hole injection efficiency at the collector side. TCAD simulation indicates that the proposed IGBT structure offers a turn-off fall time 49% lower and avalanche energy 32% higher than a conventional field-stop IGBT (FS-IGBT). Therefore, the proposed IGBT is attractive for high-speed and large-power electronic converters.
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Published: 16 January 2018
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| Fund:国家高技术研究发展计划（2014AA052601）和中央高校基本科研业务费专项项目（106112017CDJXY150099）资助 |
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Corresponding Authors:
蒋梦轩 男,1984年生,博士,讲师,研究方向为电力电子器件、封装及其电力电子系统应用。E-mail: 250151391@qq.com
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2017, Vol. 32 
