基于磁脉冲压缩的DBD高频双极性纳秒脉冲发生器的设计及其放电特性

doi:10.19595/j.cnki.1000-6753.tces.160818

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Abstract When the magnetic switch is used as a switch device of high voltage and high repetition frequency pulse voltage generator, its voltage tolerance and current capacity are much higher than those of the semiconductor switch. The magnetic switch is suitable for switching as a DBD excitation power supply. To study the characteristics of bipolar high frequency DBD plasma, a high frequency bipolar magnetic pulse compression system is proposed. First, this paper explains the principle of bipolar pulse generated by the full bridge inverter circuit, pulse transformer and magnetic switch. The design of key components is then described. Second, the influence of key parameters in circuit on the output waveform is studied using PSpice software. The resistive load voltage waveform is tested and compared with the simulation results. As a result, the nanosecond pulse generator produces a pulse on a resistor, where the amplitude in 5~13kV adjustable, the rising time of about 100ns, the repetition frequency of 0 to several kHz. Finally, this paper studies the plasma characteristics under high frequency bipolar pulse. Combined with discharge photos and theoretical calculation, the relationship between the discharge characteristics and frequency is explored, which enriches the theoretical study of high frequency bipolar discharge.

Key words： Nanosecond pulse generator magnetic pulse compression bipolar pulse dielectric barrier discharge plasma discharge frequency

Published: 16 January 2018

PACS:	TM832
	TN78
	O461.2+5

Fund:国家自然科学基金（51477022、51321063）和重庆市科委自然科学基金（cstc2014jcyjjq90001、cstc2016jcyjA0500）资助项目

Corresponding Authors: 米彦男,1978年生,教授,博士生导师,研究方向为电气设备在线监测与故障诊断、高电压新技术。E-mail: miyan@cqu.edu.cn

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	Mi Yan
	Wan Jialun
	Bian Changhao
	Yao Chenguo
	Li Chengxiang

Cite this article:

Mi Yan,Wan Jialun,Bian Changhao等. Design of DBD High-Frequency Bipolar Nanosecond Pulse Generator Based on Magnetic Pulse Compression System and Its Discharging Characteristics[J]. Transactions of China Electrotechnical Society, 2017, 32(24): 244-256.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.160818 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I24/244

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