压接式IGBT模块的动态特性测试平台设计及杂散参数提取

doi:10.19595/j.cnki.1000-6753.tces.L70683

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Abstract Press-pack IGBT modules have great potential applications in the field of large capacity power electronic conversion systems such as voltage-source-converter-based high-voltage- direct-current (VSC-HVDC), due to their excellent characteristics of good heat dissipation, low stray inductance, short circuit failure mode and so on. However, their dynamic switching characteristics have been not clearly illustrated, which has deeply restricted their industrial application. In this paper, a dynamic switching characteristics test platform for press-pack IGBT modules was designed and implemented, where the principle of double pulse test was employed. Then through Ansoft Q3D, the extraction method, distributions and impacts of the parasitic parameters were explored. Moreover, the extracted parasitic parameters were validated by experimental results. It is shown that the laminated busbar technology and the snubber capacitors can effectively reduce the device turn-off voltage overshoot and provide the reasonability of the test platform design.

Key words： Press-pack IGBT, dynamic switching characteristics, parasitic parameters

Received: 20 August 2016 Published: 05 December 2017

PACS:

TM930

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	Articles by authors
	Liu Shengfu
	Chang Yao
	Li Wuhua
	Yang Huan
	Zhao Rongxiang

Cite this article:

Liu Shengfu,Chang Yao,Li Wuhua等. Dynamic Switching Characteristics Test Platform Design and Parasitic Parameter Extraction of Press-Pack IGBT Modules[J]. Transactions of China Electrotechnical Society, 2017, 32(22): 50-57.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L70683 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I22/50

[1] 金锐, 于坤山, 张朋, 等. IGBT器件的发展现状以及在智能电网中的应用[J]. 智能电网, 2013, 1(2): 11-16.
Jin Rui, Yu Kunshan, Zhang Peng, et al. Develop- ment of IGBT devices and the typical application in the smart grid[J]. Smart Grid, 2013, 1(2): 11-16.
[2] Al'Akayshee Q, Reynolds S, Golland A, et al. Advance high power semiconductors devices in drives and power conversion[C]//6th IET Inter- national Conference on Power Electronics, Machines and Drives, Briston, UK, 2012: 1-4.
[3] Scharnholz S, Schneider R, Spahn E, et al. Investigation of IGBT-devices for pulsed power applications[C]//14th IEEE International Pulsed Power Conference, Dallas, TX, 2003: 349-352.
[4] 赵东元, 刘江. 压接式IGBT在电力系统应用特性分析[J]. 电力电子技术, 2015, 49(12): 46-48.
Zhao Dongyuan, Liu Jiang. Application analysis of the press-pack IGBT in the power electronic field[J]. Power Electronics, 2015, 49(12): 46-48.
[5] 窦泽春, 刘国友, 陈俊, 等. 大功率压接式IGBT器件设计与关键技术[J]. 大功率变流技术, 2016(2): 21-25.
Dou Zechun, Liu Guoyou, Chen Jun, et al. Design and key technologies of high-power press-pack IGBT device[J]. High Power Converter Technology, 2016(2): 21-25.
[6] 窦泽春, Rupert Stevens, 忻兰苑, 等. 新型压接式IGBT模块的结构设计与特性分析[J]. 机车电传动, 2016(1): 10-13.
Dou Zechun, Rupert Stevens, Xin Lanyuan, et al. Design and characteristic analyss of novel press- contact IGBT module[J]. Electric Drive for Loco- motives, 2016(1): 10-13.
[7] 高明超, 韩荣刚, 赵哿, 等. 压接式IGBT芯片的研制[J]. 固体电子学研究与进展, 2016, 36(1): 50-53.
Gao Mingchao, Han Ronggang, Zhao Ge, et al. The research on IGBT chip for press-pack[J]. Research & Progress of SSE, 2016, 36(1): 50-53.
[8] Uchida Y, Seki Y, Takahashi Y, et al. Development of high power press-pack IGBT and its appli- cations[C]//22nd International Conference on Micro- electronics, Nis, Yugoslavia, 2000: 125-129.
[9] Eicher S, Rahimo M, Tsyplakov E, et al. 4.5kV press pack IGBT designed for ruggedness and reliabi- lity[C]//39th IAS Annual Meeting Industry Appli- cations Conference, Seattle, WA, 2004: 1534-1539.
[10] Zeng Zhiyong, Zheng Weiyi, Zhao Rongxiang, et al. Modeling, modulation, and control of the three-phase four-switch PWM rectifier under balanced voltage[J]. IEEE Transactions on Power Electronics, 2015, 31(7): 4892-4905.
[11] Bernard Gollentz, Olivier Dirand. High power inverter using press pack IGBT for high speed appli- cations[C]//IEEE European Conference on Power Electronics and Applications, Aalborg, 2007: 1-8.
[12] 梁美, 郑琼林, 可翀, 等. SiC MOSFET、Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J]. 电工技术学报, 2015, 30(12): 41-50.
Liang Mei, Trillion Q Zheng, Ke Chong, et al. Perfor- mance comparison of SiC MOSFET, Si CoolMOS and IGBT for DAB converter[J]. Transactions of China Electrotechnical Society, 2015, 30(12): 41- 50.
[13] 陈娜, 何湘宁, 邓焰, 等. IGBT 开关特性离线测试系统[J]. 中国电机工程学报, 2010, 30(12): 50-55.
Chen Na, He Xiangning, Deng Yan, et al. An off-line IGBT switching characteristics measurement system[J]. Proceedings of the CSEE, 2010, 30(12): 50-55.
[14] 陈娜, 李鹏, 江剑, 等. 中高压IGBT开关特性的遗传神经网络预测[J]. 电工技术学报, 2013, 28(2): 239-247.
Chen Na, Li Peng, Jiang Jian, et al. Genetic neural network prediction on medium and high voltage IGBT switching performance[J]. Transactions of China Electrotechnical Society, 2013, 28(2): 239- 247.
[15] 汪鋆, 杨兵建, 徐枝新, 等. 750kV·A高功率密度二极管钳位型三电平通用变流模块的低感叠层母线排设计[J]. 中国电机工程学报, 2010, 30(18): 47-54.
Wang Jun, Yang Bingjian, Xu Zhixin, et al. Con- figuration of low inductive laminated bus bar in 750kV·A NPC three-level universal converter module of high power density[J]. Proceedings of the CSEE, 2010, 30(18): 47-54.
[16] 董玉斐, 罗皓泽, 杨贺雅, 等. 1.2MV·A混合钳位五电平变流模块的结构布局优化和叠层母排设计[J]. 电工技术学报, 2016, 31(8): 11-18.
Dong Yufei, Luo Haoze, Yang Heya, et al. Engin- eering design for structure and bus bar of 1.2MV·A hybrid clamped five-level converter module[J]. Transactions of China Electrotechnical Society, 2016, 31(8): 11-18.
[17] 罗皓泽, 李武华, 何湘宁. 高压P-i-N二极管关断瞬态综合失效机理分析[J]. 电工技术学报, 2016, 31(20): 161-169.
Luo Haoze, Li Wuhua, He Xiangning. Comprehen- sive failure mechanisms in high voltage P-i-N diode during turn-off transient[J]. Transactions of China Electrotechnical Society, 2016, 31(20): 161-169.