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| Study of IGBT Module Aging Failure Base on Bond Wire Equivalent Resistance |
| Peng Yingzhou, Zhou Luowei, Zhang Yanming, Sun Pengju, Du Xiong |
| State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China |
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Abstract Literature about the reliability of insulated gate bipolar transistor (IGBT) revealed that bond wire lift-off failure is one of the most dominant factors affecting the reliability of IGBT. This paper proposed a condition monitoring method of IGBT module based on bond-wire equivalent resistance RJ. The theoretical analysis about the relationship between equivalent resistance of bond-wires and turn-off transient-waveform of IGBT was developed at first; and then the equation calculating equivalent resistance was established; finally, the relationship between bond-wire equivalent resistance and lift-off bond wires was analyzed qualitatively and quantitatively through experiments. It is concluded that bond-wire equivalent resistance RJ will increase with the increase of bond-wires lift-off, which validates the feasibility and correctness of the proposed method.
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Received: 27 April 2016
Published: 30 October 2017
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2017, Vol. 32 
