SiC MOSFET,Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用

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Abstract Silicon carbide(SiC) semiconductor devices have received extensive attention with the better performance of the wide band gap material. It is necessary to compare with their silicon(Si) counterparts due to SiC semiconductor devices are new. In this paper, the static characteristics of SiC MOSFET, Si CoolMOS and IGBT are compared. Then, the test platform based on buck converter is constructed, the input voltage of which is 400V, the output current of which is 4~10A. Switching waveforms, switching times, dv/dt, di/dt and reverse recovery characteristic of internal diodes of three devices are tested. Finally, theoretical efficiencies and practical efficiencies of a 2kW dual active bridge (DAB) converter are compared.

Key words： SiC MOSFET CoolMOS IGBT performance DAB converter

Received: 09 August 2014 Published: 14 September 2015

PACS:

TN409

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	Articles by authors
	Liang Mei
	Trillion Q Zheng
	Ke Chong
	Li Yan
	You Xiaojie

Cite this article:

Liang Mei,Trillion Q Zheng,Ke Chong等. Performance Comparison of SiC MOSFET, Si CoolMOS and IGBT for DAB Converter[J]. Transactions of China Electrotechnical Society, 2015, 30(12): 41-50.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2015/V30/I12/41

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