新型并联谐振直流环节软开关逆变器改进调制策略

doi:10.19595/j.cnki.1000-6753.tces.221944

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Abstract With the continuous development of wide band gap devices represented by SiC MOSFET, the problems of high switching loss and strong electromagnetic interference of wide band gap inverters under high frequency have become increasingly prominent. To solve these problems, researchers put forward soft-switching inverter technology. In medium and small power applications, the resonant DC link soft-switching inverter (RDCLSI) is the first choice. After years of development, RDCLSI gradually transited to parallel RDCLSI (PRDCLSI), but the existent PRDCLIs have the following problems. Using two electrolytic capacitors as auxiliary power supply leads to the change of neutral point potential. The coupled inductor is used to replace the split capacitor, but the existence of coupled inductor makes the parameter design very complicated. Setting the inductor current threshold increases control complexity. The topology proposed in the reference “Parallel resonance DC link inverter topology and analysis of its operation principle” (Ref. [15]) and the reference “RDCL three-phase inverter and load adaptive commutation control” (Ref. [16]) can solve the above problems well. However, it is not perfect, and its auxiliary circuit has the problem that the current stress and operation times cannot be optimized at the same time. Therefore, this paper proposes an improved modulation strategy based on discontinuous pulse width modulation (DPWM) and adopting sawtooth carriers with alternating slopes.
Firstly, the composition of the improved modulation strategy is introduced. The clamped basis of DPWM is that the phase with the largest absolute value of load current is clamped. If the load current of this phase is positive, the main switch of the upper bridge leg of this phase will keep conducting. Otherwise, the main switch of the lower bridge leg will keep conducting. The changing basis of the sawtooth carrier slope is that if the load current is also positive, the sawtooth carrier slope is positive. Otherwise, the sawtooth carrier slope is negative. Secondly, according to the proposed improved modulation strategy, 14 working modes are divided, their equivalent circuits are given, and important theoretical working waveforms are drawn. Thirdly, compared with Ref. [15] and Ref. [16], the proposed improved modulation strategy considers the optimization of current stress and operation times of the auxiliary circuit. Fourthly, considering the switching loss characteristics of SiC MOSFET, the delay time is designed, and resonance parameters are selected. Fifthly, the theoretical loss of the soft-switching inverter circuit under the proposed improved modulation strategy is analyzed, which mainly includes the loss of the main switch, bus switch, auxiliary switches, auxiliary diodes, resonant inductors, and capacitors. Finally, according to the parameter design, a 5 kW/40 kHz experimental prototype is built with SiC MOSFET as the switching device to verify the characteristics of the auxiliary circuit, the realization of soft switching, the load current waveform, and the efficiency improvement.
Through theoretical analysis and experimental research, the following conclusions are drawn. (1) The main switch realizes ZVZCS turn-on and quasi-ZVS turn-off. The bus switch realizes ZVZCS turn-on and turn-off. The auxiliary switches realize quasi-ZCS turn-on and quasi-ZVS turn-off. (2) The operating frequency of the auxiliary circuit in this paper is consistent with that of Ref. [16], which is only 1/6 of that of Ref. [15]. That is, in one switching period, the auxiliary circuit only needs to operate once to realize the soft switching of all switches. (3) Compared with Ref. [15] and Ref. [16], by adopting the improved modulation strategy and reasonable parameter design, the current stress of the first and the second auxiliary switch is greatly reduced, and the conduction loss of the auxiliary circuit is effectively reduced. (4) When the switching frequency is 40 kHz, the Ref. [15] is unsuitable for the high-frequency inverter circuit. Compared with Ref. [16], the efficiency advantage of this paper is achieved in the full load range, with the peak efficiency reaching 97.97 %, and the lighter the load, the more noticeable this efficiency advantage will become.

Key words： Parallel resonant DC link auxiliary circuit modulation strategy current stress conduction loss

Received: 12 October 2022

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TM464

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	Li Si
	Yang Ming
	Ma Yu
	Song Tianyou
	Xu Dianguo

Cite this article:

Li Si,Yang Ming,Ma Yu等. Improved Modulation Strategy of Novel Parallel Resonant DC Link Soft-Switching Inverter[J]. Transactions of China Electrotechnical Society, 2024, 39(2): 487-500.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.221944 OR https://dgjsxb.ces-transaction.com/EN/Y2024/V39/I2/487

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