一种SiC MOSFET串扰抑制的谐振辅助驱动电路

doi:10.19595/j.cnki.1000-6753.tces.210599

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Abstract With the increase of the switching frequency of SiC MOSFETs, the crosstalk of inverter bridge arm becomes more and more serious, and it is easy to cause the bridge arm through short circuit, which limits the further increase of the switching frequency of SiC MOSFETs. In this paper, a resonant auxiliary driving circuit for SiC MOSFET crosstalk suppressionis proposed. By adding a capacitor inductor auxiliary resonant circuit between the gate and the source, the negative voltage can be changed to zero voltage during the turn-off period of SiC MOSFETs without any active devices. When the SiC MOSFET is turned on, the auxiliary circuit makes the gate voltage rise from 0.7V instead of a negative voltage. Compared with the traditional driving circuit, the switching speed is faster and the switching loss is lower, and alsohas the advantages of forward and reverse crosstalk suppression. This paper analyzes the parameter setting of the circuit, and verifies the advantages of the circuit through simulation and experiment.

Key words： Crosstalk suppression SiC MOSFET resonant auxiliary drive circuit passive circuit

Received: 27 April 2021

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TM23

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	Huang Yongsheng
	Zhang Jianzhong
	Wang Ning

Cite this article:

Huang Yongsheng,Zhang Jianzhong,Wang Ning. A Resonant Auxiliary Drive Circuit for SiC MOSFET to Suppress Crosstalk[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3004-3015.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.210599 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I12/3004

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