基于内置温度传感器的碳化硅功率模块结温在线提取方法

doi:10.19595/j.cnki.1000-6753.tces.201442

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Abstract

Silicon carbide (SiC) MOSFET has the advantages of high switching speed and low loss, which will be more and more widely used in high efficiency and high power density applications. In these applications, SiC MOSFETs are facing severe reliability tests, and the online accurate extraction of junction temperature is essential for lifetime prediction and health assessment. This paper proposed an online junction temperature extraction method for power module based on built-in negative temperature coefficient (NTC) temperature sensor. First, the thermal network model between the built-in NTC sensor and the power chips considering the thermal coupling effect was established, and a fast loss calculation method for SiC MOSFET was proposed. Then, the thermal network parameters were extracted by finite element simulation, and the stability of thermal network parameters under different boundary conditions was verified. Simulation and experimental results show that the proposed method can accurately obtain the dynamic junction temperature, and the thermal network model parameters are not affected by changes in boundary conditions such as ambient temperature and heat dissipation conditions. It is suitable for junction temperature monitoring and lifetime prediction under real mission profiles.

Key words： Negative temperature coefficient temperature sensor SiC MOSFET thermal network model chip temperature

Received: 30 October 2020

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TM46

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	Articles by authors
	Liu Ping
	Li Haipeng
	Miao Yiru
	Chen Changle
	Huang Shoudao

Cite this article:

Liu Ping,Li Haipeng,Miao Yiru等. Online Junction Temperature Extraction for SiC Module Based on Built-in Temperature Sensor[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2522-2534.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.201442 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I12/2522

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